Edge Plasma Generator Layout for Wafer Edge Uniformity
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Solution Overview
Problem
Current plasma processing technologies face challenges in achieving uniformity at the edge of semiconductor substrates, leading to non-uniform processing and increased costs due to the need for additional RF antennas and higher power usage, which affects the entire substrate processing.
Innovation Solution
A plasma processing apparatus with a main plasma source and an edge plasma generator, where the edge plasma generator is housed within a plate radially outward from the dielectric sidewall, providing independent plasma processing at the substrate edge without significantly impacting the main processing region, using configurations such as ICP, DBD, or CCP plasma generators.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a larger RF antenna is added at the periphery to correct edge uniformity, then edge plasma uniformity is improved, but the main plasma source becomes a corrective one and global plasma behavior changes significantly
Solution Approach 1:
The plasma generation function is segmented into two independent sources: a main plasma source for the central region and a separate edge plasma generator for the peripheral region. This allows each source to be optimized for its specific region without interfering with the other, resolving the contradiction by eliminating the need for a large corrective antenna while maintaining edge uniformity.
Solution Approach 2:
The edge plasma generator is specifically designed to address only the edge region requirements, providing localized plasma generation with appropriate power density and species flux for the peripheral area. This local approach improves edge uniformity without creating global plasma behavior changes that would occur with a large corrective antenna.
2Manufacturing precision
If a larger coil is utilized to correct process uniformity at edges, then edge uniformity is improved, but higher power is required which creates significant changes in processing conditions of the whole substrate
Solution Approach 1:
The power delivery system is segmented into two independent channels: power for the main plasma source and separate power for the edge plasma generator. This allows the edge generator to receive only the specific power level needed for edge processing, avoiding the global power increases that would result from using a larger corrective coil.
Solution Approach 2:
The edge plasma generator is designed to consume only the power necessary for edge region processing, independent of the main plasma source power consumption. This localized power approach improves edge uniformity without creating significant changes in the processing conditions of the entire substrate.
3Quantity of substance
If additional RF antenna is added at periphery, then edge plasma species flux is improved, but the original antenna becomes corrective and overall process control becomes more complex
Solution Approach 1:
The antenna system is segmented into a main antenna for central region plasma generation and a separate edge plasma generator for peripheral region plasma generation. This segmentation allows the edge generator to independently control species flux at the edge without requiring the original antenna to be reconfigured as a corrective device.
Solution Approach 2:
The edge plasma generator is specifically designed to deliver the appropriate species flux to the edge region, with its own independent control system. This local control approach improves species flux at the edge while maintaining simple and independent control of both plasma sources.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances plasma uniformity and delivers high-density neutral plasma species to the substrate edge, reducing non-uniformities and minimizing the impact on the main processing area, thereby improving manufacturing yield and reducing costs.
Implementation Method 1
The edge plasma generator includes a first electrode disposed within or adjacent to the cavity
Implementation Method 2
main plasma source includes an induction coil
Data Source
AI summary
Embodiments of the present disclosure generally relate to a plasma processing apparatus. The plasma processing apparatus includes a processing chamber including a substrate support operable to hold a substrate, a main plasma source coupled with the processing chamber, a plate, a cavity, and an edge plasma generator. The cavity is housed within the plate and spaced radially outward from a dielectric sidewall of the main plasma source.