Variable-Conductance Edge Ring for Uniform Vapor Deposition Flow

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Solution Overview

Problem

Existing edge ring designs in vapor deposition chambers increase the surface area, leading to non-uniform gas flow and purge load, which affects the uniformity of thin film deposition on substrates.

Innovation Solution

A substrate processing chamber edge ring with a variable conductance design featuring a wedge-shaped profile that varies in thickness and gap size to provide controlled gas flow conductance, ensuring uniform gas distribution across the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If one-sided pumping is used in vapor deposition chambers, then the chamber structure is simplified, but gas flow uniformity deteriorates

Engineering Contradiction:
Improvechamber structureVSAvoidgas flow uniformity
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The pumping liner incorporates localized features including a raised portion with aperture and a recessed portion with aperture, creating different flow characteristics in different regions. This local variation in structure allows the system to maintain simplified one-sided pumping while achieving uniform gas flow distribution across the substrate surface.

Inventive Principle:
Principle #3Local quality

2Stability of the object's composition

If variable conductance flow paths are designed to improve flow uniformity, then gas flow uniformity is improved, but the surface area of components increases

Engineering Contradiction:
Improveflow uniformityVSAvoidcomponent surface area
Core Design Contradiction:
Stability of the object's compositionVSArea of stationary object

Solution Approach 1:

Instead of increasing overall component surface area, the invention introduces localized conductance variations through raised and recessed portions with apertures in the pumping liner. These local structural modifications create variable flow conductance paths without significantly increasing the total surface area of components.

Inventive Principle:
Principle #3Local quality

3Device complexity

If existing edge ring designs are used, then the structure is simple, but purge load increases

Engineering Contradiction:
Improveedge ring structureVSAvoidpurge load
Core Design Contradiction:
Device complexityVSQuantity of substance

Solution Approach 1:

The edge ring incorporates a localized flow control feature with variable gap thickness, creating different flow resistance in different regions. This local variation optimizes gas flow distribution and reduces the overall purge load required to maintain chamber pressure, without complicating the overall edge ring structure.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The variable conductance edge ring enhances gas flow uniformity and reduces non-uniformity in the process cavity, resulting in improved thin film deposition uniformity on substrates.

Implementation Method 1

the wedge-shaped profile of the substrate processing chamber edge ring provides a gap between the substrate processing chamber edge ring and the bottom surface of the gas distribution first plate that tapers from a first end of the gas distribution faceplate to a second end of the gas distribution faceplate

Methodology Applied
Scientific EffectPressure Gradient: Pressure Gradient

Data Source

PatentUS20260081118A1Variable conductance edge ring for vapor deposition chamber
Publication Date: 2026.03.19 APPLIED MATERIALS INC
  • US20260081118A1 patent drawing
  • US20260081118A1 patent drawing
  • US20260081118A1 patent drawing

AI summary

Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a lower surface configured to be supported on a substrate processing chamber pedestal and an upper surface, the lower surface and the upper surface defining an edge ring thickness, the substrate processing chamber edge ring having a first edge ring thickness at a first edge of the ring-shaped body that is greater than a second edge ring thickness at a second edge opposite the first edge of the substrate processing chamber edge ring.