Edge Ring Heating Layout for Uniform Substrate Periphery Etching
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Solution Overview
Problem
Existing substrate processing technologies face challenges in controlling the etching rate at the outer periphery of substrates during plasma etching, leading to non-uniform etching characteristics and potential deposits on edge rings.
Innovation Solution
A substrate support system with a circumferentially arranged heating element and independent power feeders for each heating element, allowing precise control of the edge ring temperature through a heat-transfer gas and controlled power supply, enabling adjustable etching rates across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single heating element is used for the edge ring, then the structure is simple, but the etching rate cannot be controlled uniformly across the substrate periphery
Solution Approach 1:
The heating element is divided into multiple independent sections arranged circumferentially around the edge ring. Each section can be independently controlled by separate power feeders, allowing different heating zones to be adjusted individually. This segmentation enables precise control of the etching rate at different peripheral regions of the substrate while maintaining a manageable structural complexity.
Solution Approach 2:
Different sections of the heating element can be supplied with different power levels to create localized temperature variations. This allows the etching rate to be optimized for specific regions of the substrate periphery, achieving uniform overall etching characteristics while accommodating local variations in processing requirements.
2Stability of the object's composition
If heating power is increased to maintain edge ring temperature, then temperature stability improves, but deposits on the edge ring increase
Solution Approach 1:
The heating system transitions from static uniform heating to dynamic localized heating control. By independently adjusting the power supplied to different heating sections, the system can maintain temperature stability at the edge ring while reducing excessive heating that causes deposits. The dynamic control allows real-time adjustment of heating intensity in response to temperature measurements and processing conditions.
Solution Approach 2:
The power level supplied to each heating section can be independently adjusted as a controllable parameter. By changing the power parameters for different sections, the system maintains the edge ring temperature within an optimal range that prevents deposit formation while ensuring temperature stability for uniform etching.
3Object-generated harmful factors
If the edge ring temperature is raised to prevent deposits, then deposit reduction improves, but etching rate control at the substrate periphery deteriorates
Solution Approach 1:
The heating element is divided into multiple independently controllable sections. Some sections can be heated to higher temperatures to prevent deposits, while other sections maintain lower temperatures for precise etching rate control. This segmentation allows simultaneous optimization of both deposit prevention and etching uniformity across different peripheral regions.
Solution Approach 2:
Different local regions of the edge ring can have different temperature characteristics optimized for their specific functions. Regions prone to deposit accumulation receive higher heating power, while regions requiring precise etching control maintain lower temperatures. This local quality differentiation resolves the contradiction between deposit prevention and etching rate control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for precise control of the etching rate at the substrate's outer periphery, ensuring uniform processing and preventing deposits on the edge ring, thereby enhancing the substrate processing apparatus's efficiency and effectiveness.
Implementation Method 1
The edge ring support includes a plurality of heating elements arranged in a circumferential direction of the edge ring support and a plurality of heater power feeders. Each of the plurality of heater power feeders is included in a corresponding heating element of the plurality of heating elements to provide power from an external source to the corresponding heating element.
Implementation Method 2
The technique according to the above aspect of the present disclosure allows control of the etching rate at an outer periphery of a substrate being processed.
Data Source
AI summary
A technique allows control of the etching rate at an outer periphery of a substrate being processed. A substrate support includes a substrate support portion that supports a substrate, and an edge ring support that supports an edge ring surrounding the substrate supported on the substrate support portion. The edge ring support includes a plurality of heating elements arranged in a circumferential direction of the edge ring support and a plurality of heater power feeders. Each of the plurality of heater power feeders is included in a corresponding heating element of the plurality of heating elements to provide power from an external source to the corresponding heating element.