Edge Ring Plasma Cleaning for Electrostatic Chuck Gap Byproducts
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Solution Overview
Problem
In semiconductor device manufacturing, undesired processing byproducts accumulate in the gap between the substrate and the edge ring of electrostatic chucks, leading to plasma instabilities, arcing, and surface defects, which reduce device yield and increase maintenance needs.
Innovation Solution
A plasma processing system that uses pulsed voltage waveforms and an edge tuning circuit to control plasma density and uniformity, focusing ions onto the gap region for in-situ cleaning while protecting the substrate-supporting surface from damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional chamber cleaning methods are used to clean processing byproducts from chamber surfaces, then cleaning effectiveness is improved, but chamber downtime increases and production capacity is reduced
Solution Approach 1:
The invention segments the cleaning function by introducing a dedicated edge ring component that specifically targets the gap region between substrate and chamber wall. This localized cleaning approach allows selective removal of byproducts from critical areas without requiring complete chamber shutdowns, thereby maintaining production capacity while ensuring cleaning effectiveness.
Solution Approach 2:
The edge ring is designed to enable self-cleaning capabilities during normal operation. By incorporating features that facilitate byproduct removal from the gap region, the system maintains itself without external intervention, eliminating the need for frequent chamber cleaning cycles and preserving production capacity.
2Reliability
If frequent chamber cleaning is performed to remove accumulated byproducts, then device yield is improved, but chamber component lifetime is reduced due to surface damage
Solution Approach 1:
The invention extracts the cleaning function from the main chamber components by introducing a sacrificial edge ring component. This separate component can be easily replaced or maintained without damaging the primary chamber surfaces, thus preserving chamber component lifetime while maintaining device yield through effective byproduct removal.
Solution Approach 2:
The edge ring is designed with preliminary features that prevent byproduct accumulation in the first place. By maintaining a clean gap region through its structure and easy-maintenance design, it prevents conditions that would lead to arcing and plasma instabilities before they can affect device yield, while avoiding the need for aggressive cleaning that would damage chamber components.
3Productivity
If the gap region is not cleaned, then production capacity is maintained, but plasma instabilities and arcing occur reducing device yield
Solution Approach 1:
The edge ring serves as an intermediary component between the substrate and chamber wall that specifically addresses the gap region problem. It provides a controlled interface that prevents byproduct accumulation without interfering with normal production operations, thus maintaining both production capacity and device yield simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively removes byproducts from the gap region, reducing plasma instabilities and surface defects, thereby enhancing device yield and extending the lifetime of chamber components.
Implementation Method 1
generating a plasma in a processing region defined by a chamber lid and a substrate support assembly
Implementation Method 2
The substrate is secured to the ESC by providing a voltage potential difference between the substrate and the chucking electrode that results in an electrostatic attraction force therebetween
Data Source
AI summary
Embodiments provided herein generally include plasma processing systems configured to preferentially clean desired surfaces of a substrate support assembly by manipulating one or more characteristics of an in-situ plasma and related methods. In one embodiment, a plasma processing method includes generating a plasma in a processing region defined by a chamber lid and a substrate support assembly, exposing an edge ring and a substrate supporting surface to the plasma, and establishing a pulsed voltage (PV) waveform at the edge control electrode.