Edge Ring Assembly Plasma Uniformity Control
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Solution Overview
Problem
The increasing demand for high-aspect-ratio pattern structures in semiconductor devices leads to plasma uniformity issues at the substrate edge, resulting in reduced yield due to fine variations in plasma uniformity, necessitating a substrate processing apparatus that enhances plasma density distribution.
Innovation Solution
A substrate processing apparatus featuring an edge ring assembly with a conductor intermediate ring, connected to the electrostatic chuck and lower plate, which adjusts the plasma sheath to uniformly process the substrate by reducing impedance differences and extending the plasma production electrode to the edge ring assembly, ensuring consistent plasma density across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma processing is performed on a substrate, then the substrate can be processed with fine pattern structures, but plasma uniformity deteriorates at the substrate edge region resulting in reduced yield
Solution Approach 1:
The patent applies local quality by introducing an edge ring assembly specifically at the substrate edge region to modify plasma characteristics. The edge ring assembly includes a first edge ring and a second edge ring that create localized electric fields to enhance plasma uniformity at the edge, while the rest of the substrate continues to receive standard plasma processing. This allows different regions of the substrate to have optimized plasma characteristics suitable for their specific processing needs.
Solution Approach 2:
The edge ring assembly acts as an intermediary component between the plasma source and the substrate edge region. The first edge ring and second edge ring serve as intermediate structures that generate and control the plasma sheath at the substrate edge, mediating the plasma-substrate interaction to achieve uniform plasma density and improved processing reliability at the edge region.
2Productivity
If the substrate size is enlarged to increase production capacity, then more devices can be processed simultaneously, but plasma uniformity control becomes more difficult leading to edge region failures
Solution Approach 1:
The patent addresses enlarged substrate processing by applying local quality enhancement through the edge ring assembly. The first and second edge rings are positioned to specifically target the edge regions of large substrates, creating localized plasma uniformity improvement without affecting the overall substrate processing. This allows large substrates to be processed with consistent plasma characteristics across the entire surface, maintaining manufacturing precision while increasing productivity.
3Device complexity
If conventional plasma processing is used without edge ring assembly, then the apparatus structure remains simple, but plasma density uniformity deteriorates at the substrate edge
Solution Approach 1:
The edge ring assembly serves as an intermediary component that can be added to existing plasma processing apparatus without fundamentally redesigning the entire system. The first edge ring and second edge ring are relatively simple structures that interface between the plasma source and substrate, providing plasma uniformity enhancement with minimal increase in overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves uniform plasma processing across the substrate, enhancing process rates and production yield by maintaining equipotential surfaces and adjusting the plasma sheath to cover the entire substrate region, including the edge areas.
Implementation Method 1
providing a high-frequency signal to the electrostatic chuck, thereby producing a plasma
Implementation Method 2
each of the screw, the socket and the intermediate ring includes a conductor
Data Source
AI summary
A substrate processing apparatus includes a lower plate in a chamber, an electrostatic chuck on the lower plate, the electrostatic chuck including a first step surface, an intermediate ring disposed on the first step surface of the electrostatic chuck, a lower ring surrounding a portion of the intermediate ring and an outer sidewall of the electrostatic chuck on the lower plate, an upper ring covering an upper portion of the intermediate ring, a screw extending through the electrostatic chuck into the lower plate, and a socket connected to each of the screw and the intermediate ring. Each of the screw, the socket and the intermediate ring includes a conductor.