Edge Termination Barrier Structure for Moisture-Resistant Semiconductors
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining reliability due to issues such as capping layer peeling or cracking, and exposure to external oxygen or moisture, which can degrade performance and durability, especially in high-temperature environments.
Innovation Solution
The semiconductor device incorporates a barrier pattern with a first and second barrier layer, where the second barrier layer penetrates the interlayer insulating layer to connect with a first barrier layer, providing protection against external factors and enhancing the device's structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-layer barrier structure is used, then the device structure is simple, but the capping layer peels or cracks and external oxygen or moisture penetrates
Solution Approach 1:
The barrier structure is divided into multiple layers: a first barrier layer (e.g., silicon oxide) and a second barrier layer (e.g., silicon nitride) with different material properties and functions. This segmentation allows each layer to address specific failure modes independently, preventing capping layer peeling and moisture penetration simultaneously.
Solution Approach 2:
The patent employs composite barrier structure combining different materials (silicon oxide and silicon nitride) with complementary properties. The silicon oxide layer provides good interface adhesion to prevent peeling, while the silicon nitride layer provides superior moisture barrier properties, creating a synergistic protective system.
2Reliability
If the second barrier layer is confined to the peripheral circuit region, then the manufacturing process is simpler, but moisture can still penetrate through the interlayer insulating layer in the cell region
Solution Approach 1:
The second barrier layer is extended vertically through the interlayer insulating layer via penetration structures, creating a three-dimensional protective pathway. This dimensional approach allows the barrier to reach underlying layers in the cell region without requiring lateral expansion of the barrier pattern across the entire device area.
Solution Approach 2:
The barrier pattern is designed with penetration structures that extend through the interlayer insulating layer before final device assembly. This preliminary protective action ensures that moisture barriers are in place before potential exposure occurs, preventing contamination from the outset.
Data Source
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AI summary
A semiconductor device according to various example embodiments includes a substrate including a cell region and a peripheral circuit region outside the cell region, a first conductivity type semiconductor layer on a first surface of the substrate, a second conductivity type doping well region within the first conductivity type semiconductor layer, a gate electrode above the first conductivity type semiconductor layer in the cell region, a gate insulating layer between the first conductivity type semiconductor layer and the gate electrode, a source electrode above the second conductivity type doping well region, a drain electrode on a second surface of the substrate, the second surface being opposite the first surface, a barrier pattern including a first barrier layer above the first conductivity type semiconductor layer, and a second barrier layer on the first barrier layer in the peripheral circuit region.