Edge Termination Structure for Higher Breakdown Voltage
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Solution Overview
Problem
Existing semiconductor devices face challenges in effectively managing electric field strength at the edge termination structure, particularly in regions where guard rings are employed, leading to potential breakdown and reduced breakdown voltage.
Innovation Solution
The implementation of a semiconductor device with an edge termination structure that includes guard rings and embedded dielectric films, which extend the depletion layer outward and incorporate field plates to manage electric field strength, thereby enhancing breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If guard rings are employed in the edge termination structure, then the device can provide basic electric field management, but the electric field strength is not effectively reduced leading to potential breakdown and reduced breakdown voltage
Solution Approach 1:
The edge termination structure is segmented into multiple functional components: guard rings for basic field management, embedded dielectric films for field isolation and depletion layer extension, and field plates for additional electric field control. This segmentation allows each component to address specific aspects of electric field management, collectively achieving effective reduction of electric field strength while maintaining high breakdown voltage.
Solution Approach 2:
Embedded dielectric films are introduced as intermediary elements between the guard rings and the drift region. These dielectric films mediate the electric field distribution by providing field isolation and extending the depletion layer, thereby reducing the direct electric field strength at critical interfaces without compromising the overall device performance and breakdown voltage.
2Reliability
If the depletion layer is extended outward to reduce electric field strength, then breakdown voltage improves, but the device structure becomes more complex
Solution Approach 1:
The embedded dielectric films are merged with the existing guard ring structure to form an integrated edge termination system. This merging allows the depletion layer extension function to be achieved without adding completely separate structures, as the dielectric films work in conjunction with the guard rings to collectively manage the electric field and improve breakdown voltage while limiting overall structural complexity.
Solution Approach 2:
The embedded dielectric films serve multiple functions simultaneously: they extend the depletion layer outward, provide field isolation, and work with the guard rings to manage electric field distribution. This multi-functionality allows the structure to achieve depletion layer extension and improved breakdown voltage without requiring additional dedicated components, thereby limiting the increase in device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure effectively reduces electric field strength and improves breakdown voltage by extending the depletion layer, providing a more robust semiconductor device design.
Implementation Method 1
embedded dielectric films, which extend the depletion layer outward and incorporate field plates to manage electric field strength
Implementation Method 2
incorporate field plates to manage electric field strength, thereby enhancing breakdown voltage
Data Source
AI summary
Provided is a semiconductor device including a semiconductor substrate having a first dopant of a first conductivity type and a second dopant of a second conductivity type, both the first dopant and the second dopant being distributed in an entire part of the semiconductor substrate, the semiconductor substrate including a drift region of the first conductivity type, a dielectric film provided on an upper surface of the semiconductor substrate, a high concentration region of the first conductivity type provided in contact with the dielectric film below the dielectric film and having a higher doping concentration than the drift region, and a fall off region that is provided in contact with the dielectric film below the dielectric film and in which a concentration of the dopant of the second conductivity type decreases toward the dielectric film.