Edge Termination Doping Layout for High-Voltage Semiconductor Dies
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Solution Overview
Problem
Existing semiconductor devices with wide edge terminations compromise device size and competitiveness due to high proportion of edge terminations, which are necessary for maintaining high breakdown voltage.
Innovation Solution
A semiconductor device design with an epitaxial layer divided into active, transition, and edge termination regions, featuring a drift region, transition doped region, and termination doped regions of differing conductivity types and doping concentrations, allowing for a reduced edge termination width while maintaining sufficient breakdown voltage through enhanced depletion regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the edge termination width is increased to maintain high breakdown voltage, then the breakdown voltage is improved, but the device size increases
Solution Approach 1:
The patent applies local quality by creating different doped regions with specific conductivity types and doping concentrations in different areas of the semiconductor device. The first termination doped region has a first conductivity type and first doping concentration, while the second termination doped region has a second conductivity type and second doping concentration. This localized differentiation allows the edge termination to maintain high breakdown voltage through optimized local electrical properties rather than uniformly increasing the entire termination width, thereby reducing the overall device size while preserving reliability.
2Area of stationary object
If the edge termination width is reduced to decrease device size, then the device size is reduced, but the breakdown voltage decreases
Solution Approach 1:
The patent employs parameter changes by varying the conductivity type and doping concentration parameters of the termination doped regions. The first termination doped region uses a first conductivity type and first doping concentration, while the second termination doped region uses a second conductivity type and second doping concentration. By optimizing these parameters locally, the invention achieves sufficient breakdown voltage with a reduced edge termination width, thus decreasing device size without sacrificing reliability.
3Reliability
If the doping concentration of termination regions is increased to improve breakdown voltage, then the breakdown voltage is improved, but the charge balance deteriorates
Solution Approach 1:
The patent applies local quality by assigning different conductivity types to different termination regions. The first termination doped region has a first conductivity type, while the second termination doped region has a second conductivity type. This differentiation allows each region to contribute differently to the overall electrical characteristics, maintaining charge balance while achieving high breakdown voltage through localized optimization rather than uniform high doping throughout.
Solution Approach 2:
The patent uses composite materials by combining doped regions with different conductivity types in the termination structure. The first termination doped region with first conductivity type and the second termination doped region with second conductivity type form a composite structure that leverages the complementary electrical properties of opposite conductivity types. This composite approach enables the maintenance of charge balance while achieving enhanced breakdown voltage, as the different conductivity types work together to optimize the overall electrical performance.
Data Source
AI summary
A semiconductor device includes a substrate and an epitaxial layer over the substrate. The epitaxial layer is divided into an active region, a transition region, and an edge termination region. The epitaxial layer includes a drift region in the active region, the transition region, and the edge termination region, a transition doped region in the transition region, and a termination doped region in the edge termination region. The drift region has a first conductivity type. The transition doped region and the termination doped region have a second conductivity type. A doping concentration of the termination doped region is lower than that of the transition doped region. The distance between an edge of the termination doped region away from the transition doped region and an edge of the termination doped region in contact with the transition doped region is greater than a thickness of the epitaxial layer.