Edge Termination Region Doping Profile for Semiconductor Robustness
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Solution Overview
Problem
Semiconductor devices with edge termination structures face challenges in achieving high breakdown voltages while maintaining robustness against surface charges and cosmic radiation, particularly with junction termination extension (JTE) regions that require minimal chip area and cost-effective manufacturing.
Innovation Solution
The semiconductor device incorporates a first and second edge termination region of opposite conductivity types, with the second edge termination region having a varying concentration of dopants that increases substantially linearly with distance from the first edge termination region and the active area, and a horizontal extension at least two times larger than the vertical extension, enhancing robustness and breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If junction termination extension (JTE) regions with variable lateral doping concentration are used to widen the space-charge region, then chip area and manufacturing costs are reduced, but robustness with respect to surface charges and cosmic radiation becomes unsatisfactory
Solution Approach 1:
The edge termination structure is segmented into multiple alternating regions of first and second conductivity types (first edge termination region, second edge termination region, third edge termination region, etc.). Each region has specific doping concentrations and geometries that work together to provide both area efficiency and enhanced robustness against surface charges and cosmic radiation.
Solution Approach 2:
Different regions of the edge termination structure have locally optimized properties: the first edge termination region has a first doping concentration, the second edge termination region has a second doping concentration, and each region's geometry (horizontal extension vs. vertical extension) is tailored to its specific function in the overall structure, providing both compactness and radiation hardness.
2Reliability
If conventional edge termination structures are used to achieve high breakdown voltages, then robustness against surface charges and cosmic radiation is improved, but chip area increases and manufacturing costs rise
Solution Approach 1:
The invention merges the benefits of conventional edge termination structures (robustness) with the advantages of JTE regions (compactness) by combining multiple doping regions of alternating conductivity types in a integrated structure. This merging allows the device to achieve high breakdown voltages and radiation hardness without requiring large chip area.
Solution Approach 2:
The edge termination structure uses a composite doping profile with multiple regions of different conductivity types (first and second conductivity types) and different doping concentrations. This composite structure provides enhanced robustness against surface charges and cosmic radiation while maintaining compact dimensions suitable for cost-effective manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the robustness of semiconductor devices against surface charges and cosmic radiation, ensuring a sufficient breakdown voltage while minimizing chip area and manufacturing costs.
Implementation Method 1
JTE regions with variable lateral doping concentration (VLD) have been found to be particularly interesting as they allow the desired widening of the space-charge region at the junction surface
Implementation Method 2
a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region
Implementation Method 3
an edge-termination structure for distributing the applied voltage over a wider region (widening of a space-charge region in a blocking mode)
Data Source
AI summary
An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.