EEE Memory High Voltage Failure Recovery
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Solution Overview
Problem
Emulated electrically erasable (EEE) memory systems face failure mechanisms during high voltage operations, leading to unreliable erase operations, sector identifier updates, and write failures, which can result in the loss of data and inability to function.
Innovation Solution
A high voltage failure recovery scheme is implemented by tracking two types of failed sectors using sector status, stored in a brownout tolerant approach, to block invalid data transfer and avoid unnecessary high voltage operations, thereby extending the operating life and improving endurance of the EEE memory system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high voltage operations are performed on sectors in EEE memory system, then erase operations and write operations can be executed, but failure mechanisms occur leading to unreliable operations and data loss
Solution Approach 1:
The patent applies preliminary action by performing brownout-tolerant status checks on sectors before executing high voltage operations. The memory controller checks the status of each sector to identify failed sectors beforehand, and blocks operations on those sectors to prevent failures. This advance detection and blocking mechanism ensures that unreliable operations are avoided, resolving the contradiction between maintaining productivity and ensuring reliability.
2Ease of operation
If high voltage operations continue on failed sectors, then operational attempts can be made, but endurance decreases and operating life is reduced
Solution Approach 1:
The patent implements feedback by continuously monitoring sector status through brownout-tolerant status checks and using this information to control subsequent high voltage operations. The memory controller maintains a record of sector statuses and uses this feedback to dynamically block operations on failed sectors. This feedback mechanism prevents repeated unsuccessful operations on failed sectors, thereby extending the overall endurance and operating life of the memory system while maintaining ease of operation through automated status tracking.
3Reliability
If sector status tracking is implemented, then failed sectors can be identified and avoided, but device complexity increases
Solution Approach 1:
The patent applies self-service by implementing brownout-tolerant status checks that allow the memory system to autonomously detect and track failed sectors without requiring complex external intervention. The sector status information is stored in a brownout-tolerant manner, enabling the system to self-diagnose and self-manage failed sectors. This self-service approach maintains data integrity through automated status tracking while minimizing device complexity by using straightforward status checking and blocking mechanisms rather than complex error correction or recovery systems.
Data Source
AI summary
The present disclosure provides methods and circuits for managing failing sectors in a non-volatile memory. A record address and a read control signal are received, where the record address identifies a location in the non-volatile memory. The record address is compared with a plurality of dead sector addresses, where the dead sector addresses correspond to a subset of sectors located in the non-volatile memory. Data located at the record address is determined to be invalid in response to a combination of a first detection that the record address matches one of the dead sector addresses and a second detection that the read control signal indicates a read operation is requested to be performed on the non-volatile memory.