EFESD Rectifier Device for Vehicle Powertrain Efficiency
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Solution Overview
Problem
Current low loss diodes for high-efficiency generators face limitations due to increased reverse bias leakage current at high temperatures and low forward bias conducting resistance, which restricts overall rectification efficiency.
Innovation Solution
The integration of a lateral conducting silicide structure and a field effect junction structure in an Enhanced Field Effect Semiconductor Diode (EFESD) within a rectifier chip, which provides a uni-polar carrier source and reduces leakage current, enhancing forward current density and cell density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional low loss diode chips are used, then forward bias conducting resistance is reduced, but reverse bias leakage current increases at high temperatures
Solution Approach 1:
The patent combines the lateral conducting silicide structure and field effect junction structure into an integrated EFESD device, merging the low resistance conduction path with the field effect controlled junction to simultaneously achieve low forward bias resistance and suppressed reverse bias leakage current through the unified device architecture
Solution Approach 2:
The patent changes the electrical parameters of the diode by introducing the field effect junction structure that enables dynamic control of the depletion region, altering the reverse bias leakage characteristics without compromising forward conduction, thereby resolving the temperature-dependent leakage issue
2Productivity
If cell density is increased to improve rectification efficiency, then chip usage area increases, but body area must be reduced
Solution Approach 1:
The patent transitions from conventional vertical diode structures to a lateral conducting silicide structure with field effect junction, utilizing lateral current flow paths that enable higher cell density packing while maintaining adequate body area for carrier injection and collection
Solution Approach 2:
The patent applies different structural configurations to different regions of the chip, with the lateral conducting silicide structure optimized for high-density cell regions and the field effect junction structure providing localized control, enabling increased overall cell density while preserving necessary body area characteristics in critical zones
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The EFESD achieves higher forward current density and lower reverse leakage current, improving rectification ability and increasing chip usage area, while reducing the body area and current crowding effects, thus enhancing rectification efficiency.
Implementation Method 1
The silicide layer includes a lateral conducting silicide structure conducting to the body area
Implementation Method 2
The EFESD includes a body area, a silicide layer, a field effect junction structure
Data Source
AI summary
Provided is a rectifier device for a vehicle alternator including a rectifying element for rectifying in an alternator. The rectifying element has an Enhanced Field Effect Semiconductor Diode (EFESD). The EFESD includes a lateral conducting silicide structure and a field effect junction structure integrating side by side. A rectifier, a generator device, and a powertrain for a vehicle are also provided.