e-Fuse Heating Transistor Layout for Lower Programming Current
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Solution Overview
Problem
High programming current requirements for electrically programmable fuses (e-fuses) necessitate larger programming transistors, consuming valuable space on integrated circuits.
Innovation Solution
Incorporation of Fin-type bipolar-junction-transistors (Fin-BJTs) or Fin-type field-effect-transistors (Fin-FETs) adjacent to the e-fuse, which generate heat to reduce the programming current needed by increasing the e-fuse temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a high programming current is applied to program the e-fuse, then the e-fuse can be reliably programmed (blown), but a larger programming transistor is required, consuming valuable space on the integrated circuit
Solution Approach 1:
The patent applies preliminary heating action by activating the heating transistor before applying the programming current. This pre-heating raises the temperature of the e-fuse conductive line, reducing its melting point and enabling reliable programming with a lower peak current. The heating transistor is activated in advance to prepare the e-fuse for programming, thereby reducing the required programming current and allowing for a smaller programming transistor.
Solution Approach 2:
The patent changes the temperature parameter of the e-fuse by introducing a heating transistor that raises the e-fuse temperature before programming. This parameter change (temperature increase) modifies the physical state of the e-fuse conductive line, reducing its resistance and enabling it to be blown with lower current. The heating transistor dynamically adjusts the temperature parameter to optimize programming conditions.
2Reliability
If a high programming current is used to ensure reliable e-fuse programming, then programming can be achieved, but the programming transistor size increases, reducing integration density
Solution Approach 1:
The heating transistor is activated before the programming current is applied to pre-heat the e-fuse conductive line. This preliminary heating action reduces the melting point of the line material, enabling reliable programming with lower peak current. As a result, a smaller programming transistor can be used, increasing the integration density of the circuit.
Solution Approach 2:
The patent introduces a temperature parameter change by using the heating transistor to raise the e-fuse temperature. This parameter modification allows the e-fuse to be programmed at lower currents, thereby reducing the size requirement for the programming transistor and improving overall integration density.
3Area of stationary object
If the programming transistor size is reduced to save space, then integration density improves, but the programming current capability is insufficient to reliably program the e-fuse
Solution Approach 1:
The heating transistor is activated in advance to pre-heat the e-fuse conductive line, reducing its melting point before the programming current is applied. This preliminary action enables a smaller programming transistor to deliver sufficient current to blow the pre-heated e-fuse line, thereby maintaining programming reliability with reduced transistor area.
Solution Approach 2:
The patent modifies the temperature parameter of the e-fuse using the heating transistor, which lowers the effective melting point of the conductive line. This parameter change allows a smaller programming transistor to achieve reliable programming by exploiting the reduced temperature threshold of the pre-heated e-fuse material.
4Area of stationary object
If Fin-type transistors are used to reduce transistor area, then space consumption is minimized, but additional transistor structures are required adjacent to the e-fuse
Solution Approach 1:
The patent merges the programming transistor and heating transistor functions into a single integrated structure. The Fin-type transistor serves dual purposes: as the programming transistor that blows the e-fuse and as the heating transistor that pre-heats the e-fuse line. This merging eliminates the need for separate heating structures, reducing overall device complexity while maintaining area efficiency.
Solution Approach 2:
The Fin-type programming transistor is designed to perform multiple functions: it acts as both the programming transistor that delivers the blow current and the heating transistor that pre-heats the e-fuse conductive line. This multi-functionality reduces the need for additional dedicated heating structures, thereby minimizing overall device complexity while achieving compact integration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces the programming current required to blow the e-fuse, minimizing space consumption and transistor size on integrated circuits.
Implementation Method 1
a current flowing through the Fin-BJT increases a temperature of the e-fuse
Implementation Method 2
a current flowing through the Fin-FET increases a temperature of the e-fuse
Data Source
AI summary
A structure includes: an electrically programmable fuse (e-fuse) including an anode and a cathode; at least one transistor positioned adjacent the e-fuse; and an electrically conductive interconnect coupling the cathode of the e-fuse to the at least one transistor, wherein the at least one transistor includes at least one semiconductor fin extending perpendicularly to the e-fuse.