Electronic Fuse Resistance Readout Using Doped Isolation Regions
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing electronic fuse devices lack effective methods to accurately detect and ensure the complete blowing of fuse components, which is crucial for maintaining device efficiency and functionality.
Innovation Solution
The electronic fuse device incorporates a highly doped region and well regions with specific doping concentrations to isolate and control the blowing and detection of insulating layer portions, using multiple gates and electrodes to apply controlled voltages for precise resistance measurement and detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple gates and electrodes are used to apply controlled voltages for precise resistance measurement, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The device is divided into multiple functional regions including a first doping region, second doping region, third doping region, and highly doped region. Each region serves a specific function in the resistance measurement process, allowing precise control and measurement while maintaining clear functional separation.
Solution Approach 2:
Different doping concentrations are applied to different regions of the substrate. The highly doped region has a doping concentration significantly higher than the other regions, creating localized electrical characteristics that enable precise resistance measurement at specific locations without affecting the entire device.
2Reliability
If a highly doped region is introduced to isolate and control blowing detection, then reliability is improved, but device complexity increases
Solution Approach 1:
The substrate is segmented into multiple doped regions with distinct electrical properties. The highly doped region acts as an isolation barrier that separates different functional areas, ensuring that detection signals are not interfered with by adjacent regions and improving overall detection reliability.
Solution Approach 2:
The highly doped region serves as an intermediary element between the first-third doping regions. It provides electrical isolation and control, mediating the interaction between different parts of the device to ensure accurate detection of insulating layer blowing while maintaining a relatively simple overall structure.
3Measurement precision
If multiple voltage application steps are used to detect different portions of insulating layer, then measurement precision is improved, but loss of time increases
Solution Approach 1:
The device structure is prepared in advance with multiple doped regions and gates positioned to enable sequential voltage application. This preliminary structural arrangement allows for efficient multi-step measurement without requiring complex real-time adjustments, reducing the overall measurement time while maintaining precision.
Solution Approach 2:
The resistance measurement process uses periodic voltage application through different gates at different steps. By applying voltages in a structured sequence through the first pass gate, second pass gate, and fuse gate, the device efficiently detects different portions of the insulating layer in a time-optimized manner.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Ensures accurate detection of all intended blowing positions, minimizes device size, and simplifies implementation by using a highly doped region to enhance detection accuracy and independence of fuse gate operations.
Implementation Method 1
using multiple gates and electrodes to apply controlled voltages for precise resistance measurement and detection
Implementation Method 2
The substrate includes a first doping region, a second doping region, a third doping region, and a highly doped region
Data Source
AI summary
An electronic fuse device includes a substrate, an insulating layer on the substrate, a first fuse gate, a first pass gate, and a first readout electrode. The substrate includes a first doping region, a second doping region, and a third doping region having a first conductivity type, and a highly doped region having a second conductivity type different from the first conductivity type. The first doping region is between the second doping region and the highly doped region. The second doping region is between the first doping region and the third doping region. The first fuse gate is on the insulating layer and between the first doping region and the second doping region. The first pass gate is on the insulating layer and between the second doping region and the third doping region. The first readout electrode is electrically connected to the third doping region.


