E-fuse Array Integration via Voltage Detection Circuit

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Solution Overview

Problem

Semiconductor devices face limitations in integration density due to the inability to program general fuses after encapsulation, which is addressed by employing e-fuse arrays that share amplifiers, but this approach has its own limitations in increasing integration density.

Innovation Solution

A semiconductor device incorporating a start signal generation circuit that detects external and internal voltage signals to generate a start signal through differential amplification, enabling a boot-up operation that transmits control data to data latch units, thereby improving integration density by stabilizing voltage detection and preventing malfunctions from noise signals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If e-fuse arrays are employed to share amplifiers, then integration density is improved, but voltage detection stability deteriorates due to noise signals

Engineering Contradiction:
Improveintegration densityVSAvoidvoltage detection stability
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

A noise signal filter is introduced as an intermediary component between the voltage detection circuit and the e-fuse array. The filter processes the voltage signals detected by the start signal generation circuit, removing noise components while preserving valid signal information. This allows the system to maintain high integration density through shared amplifiers while ensuring stable and accurate voltage detection by eliminating the harmful effects of noise signals.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If transistor size is increased to recognize data in e-fuses, then data recognition accuracy is improved, but device area increases reducing integration density

Engineering Contradiction:
Improvedata recognition accuracyVSAvoiddevice area
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The patent changes the operating parameters of the existing transistors in the e-fuse array by applying different threshold voltages through the noise signal filter processing. Instead of increasing transistor physical size to improve data recognition accuracy, the system optimizes the electrical parameters (threshold voltage levels) of the transistors. This allows accurate data recognition to be achieved through parameter optimization rather than dimensional expansion, thereby maintaining high integration density.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances integration density and stability in semiconductor devices by enabling effective detection and amplification of voltage signals, ensuring reliable boot-up operations and data transmission, even in the presence of noise, thus overcoming previous limitations in programming and integration density.

Implementation Method 1

execute a differential amplification operation of a voltage difference between the external voltage signal and a reference voltage signal to generate a first detection signal

Methodology Applied
Scientific EffectDifferential amplification:

Data Source

PatentUS9064588B1Semiconductor devices including E-fuse arrays
Publication Date: 2015.06.23 SK HYNIX INC
  • US9064588B1 patent drawing
  • US9064588B1 patent drawing
  • US9064588B1 patent drawing

AI summary

The semiconductor device includes a start signal generation circuit and a boot-up operation circuit. The start signal generation circuit detects a level of an external voltage signal to generate a pre-detection signal; executes a differential amplification operation of a voltage difference between the external voltage signal and a reference voltage signal to generate a first detection signal; detects a level of an internal voltage signal to generate a second detection signal, and generates a start signal in response to the first and second detection signals. The boot-up operation circuit executes a boot-up operation in response to the start signal.