Electrohydrodynamic Slurry Supply for CMP Planarization
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Solution Overview
Problem
In semiconductor manufacturing, chemical mechanical polishing (CMP) processes face challenges in achieving consistent planarization of wafer surfaces due to irregularities, which can lead to alignment errors and process failures, and require precise slurry supply to maintain process stability.
Innovation Solution
A chemical mechanical polishing apparatus equipped with a slurry supply device featuring a capillary nozzle with a pin-type conductive tip and a voltage supply unit, which electro-hydrodynamically sprays slurry onto the polishing pad, ensuring a controlled and appropriate amount of slurry is applied.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional slurry supply methods are used, then the CMP process can be carried out, but the slurry supply amount is unstable and inconsistent
Solution Approach 1:
The patent replaces conventional mechanical slurry supply systems with an electro-hydrodynamic (EHD) slurry supply system. The EHD nozzle uses electrical fields to control slurry discharge, eliminating mechanical wear and instability. The voltage applied to the nozzle creates an electrical field that precisely controls slurry flow, providing stable and consistent supply amounts for reliable CMP processing.
Solution Approach 2:
The patent changes the physical state and control parameters of slurry supply by applying voltage to the EHD nozzle. By adjusting electrical parameters (voltage, frequency) instead of mechanical parameters, the system achieves precise control over slurry flow rate and distribution, ensuring consistent planarization results.
2Reliability
If more slurry is supplied to ensure adequate coverage, then polishing can proceed, but slurry loss increases and processing cost rises
Solution Approach 1:
The EHD nozzle provides localized and controlled slurry supply exactly where needed on the polishing pad. The electrical field confines slurry discharge to specific regions, preventing unnecessary slurry spread and loss. This localized supply method ensures adequate coverage for process stability while minimizing overall slurry consumption.
Solution Approach 2:
The electro-hydrodynamic control mechanism replaces mechanical spray or flood supply methods, enabling precise metering of slurry. The electrical field control allows for exact slurry dosing, reducing excess slurry application and associated losses while maintaining sufficient supply for stable CMP operation.
3Manufacturing precision
If conventional slurry supply devices are used, then the apparatus structure remains simple, but the slurry supply amount cannot be precisely controlled
Solution Approach 1:
The patent introduces an electro-hydrodynamic nozzle that uses electrical fields instead of complex mechanical adjustment mechanisms to control slurry supply. This substitution achieves precise control through electrical parameters while keeping the physical structure relatively simple, avoiding the need for complex mechanical linkages, valves, or adjustment devices.
Solution Approach 2:
The system achieves precise slurry supply control by changing electrical parameters (voltage, frequency) rather than requiring complex mechanical adjustments. This parameter-based control method provides high precision while maintaining device simplicity, as electrical control is inherently more precise and easier to automate than mechanical control systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively provides a consistent and controlled slurry supply, enhancing the CMP process by minimizing slurry loss and reducing processing costs, while maintaining the precision needed for high integration circuit patterns.
Implementation Method 1
at least one slurry supply device that is disposed adjacent to the polishing pad and supplies a slurry to the polishing pad. The slurry supply device may comprise: a capillary nozzle that is disposed over the polishing pad and includes a pin-type conductive tip therein; a slurry supply unit that supplies the slurry into the capillary nozzle; and a voltage supply unit that applies a voltage to the tip.
Data Source
AI summary
Disclosed is a chemical mechanical polishing apparatus. The chemical mechanical polishing apparatus comprises a lower base, a platen configured to rotate and provided on a top surface of the lower base, a polishing pad on the platen; and at least one slurry supply device that is disposed adjacent to the polishing pad and supplies a slurry to the polishing pad. The slurry supply device comprises a capillary nozzle that is disposed over the polishing pad and includes a pin-type conductive tip therein, a slurry supply unit that supplies the slurry into the capillary nozzle, and a voltage supply unit that applies a voltage to the pin-type conductive tip.


