Electret Microphone Cascode Circuit for Low-Noise Output

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Solution Overview

Problem

Existing electret microphones face challenges with high output impedance, distortion, and noise levels, which affect their performance in capturing audio signals effectively.

Innovation Solution

The design incorporates a cascode circuit comprising transistors, including a field effect transistor (FET) and bipolar transistors, with specific connections and components like capacitors and resistances to reduce noise and impedance, and a protective circuit for improved signal processing and noise reduction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a conventional electret microphone design is used, then the basic microphone function is achieved, but the output impedance is high and noise levels are elevated

Engineering Contradiction:
Improvesignal qualityVSAvoidnoise
Core Design Contradiction:
Measurement precisionVSObject-generated harmful factors

Solution Approach 1:

A cascode circuit is introduced as an intermediary stage between the microphone capsule and the output. This cascode circuit includes a first transistor connected to the microphone capsule output and a second transistor connected to the first transistor, acting as a mediator to buffer and condition the signal. This intermediary stage isolates the high-impedance microphone capsule from the low-impedance output requirements while providing noise filtering and signal conditioning, thereby reducing noise and optimizing impedance matching without compromising signal quality

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The output impedance parameter is actively transformed through the cascode circuit configuration. The first transistor converts the high impedance from the microphone capsule, and the second transistor further transforms it to a low output impedance suitable for audio equipment. Additionally, temperature-dependent resistances are employed to dynamically adjust electrical parameters, compensating for temperature fluctuations and maintaining optimal noise performance across varying environmental conditions

Inventive Principle:
Principle #35Parameter changes

2Power

If standard amplifier circuits are used in electret microphones, then signal amplification is achieved, but distortion factors increase

Engineering Contradiction:
Improvesignal amplificationVSAvoiddistortion
Core Design Contradiction:
PowerVSManufacturing precision

Solution Approach 1:

The cascode circuit serves as an intermediary amplification stage that preserves signal fidelity. The first transistor provides initial signal amplification with high input impedance to avoid loading the microphone capsule, while the second transistor provides additional amplification with low output impedance. This two-stage intermediary approach distributes the amplification burden, preventing the high distortion that would occur in a single-stage amplifier, while still achieving the required signal power amplification

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The amplification function is segmented into multiple independent stages rather than using a single amplifier circuit. The first transistor handles the initial amplification of the weak microphone signal, and the second transistor handles the final amplification and impedance matching. This segmentation allows each stage to operate within its optimal performance range, minimizing distortion while achieving the necessary overall amplification gain

Inventive Principle:
Principle #1Segmentation

3Stability of the object's composition

If temperature compensation is added to the electret microphone, then stability under temperature fluctuations is improved, but device complexity increases

Engineering Contradiction:
Improvetemperature stabilityVSAvoidcircuit complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

Temperature-dependent resistances are employed that automatically adjust their resistance values in response to temperature changes without requiring external control circuits or additional active components. These resistances self-regulate the bias conditions of the transistors to compensate for temperature-induced parameter drift, providing temperature stability through passive self-service mechanisms rather than complex active temperature control systems

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The resistance values of temperature-dependent resistors change with temperature to automatically compensate for drift in transistor parameters. As temperature varies, these resistances adjust the operating point of the transistors to maintain stable electrical characteristics. This parameter change approach provides temperature stability through passive physical property variations rather than complex active compensation circuits

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS20230396932A1Electret microphone
Publication Date: 2023.12.07 SENNHEISER ELECTRONICS GMBH & CO KG
  • US20230396932A1 patent drawing
  • US20230396932A1 patent drawing
  • US20230396932A1 patent drawing

AI summary

An electret microphone is provided, comprising a microphone capsule with an output connection, a first input connection as an earth connection and a second input connection for providing a supply voltage for the microphone capsule and for leading out a microphone output signal of the microphone capsule, and a cascode consisting of a first and second transistor. An output connection of the microphone capsule is provided as input of the cascode. The second transistor is configured as a field effect transistor FET and the gate connection thereof is coupled to the output connection of the microphone capsule. A drain connection of the second transistor is coupled to an emitter connection of the first transistor as bipolar transistor or to a source connection of the first transistor as an FET transistor. Furthermore, a third transistor is provided as bipolar transistor, whose emitter connection is coupled to the second input connection. A collector connection of the third transistor is coupled via a capacitor to earth. A base connection of the third transistor is coupled via a resistance to the second input connection. The base connection of the third transistor is coupled to a collector connection of the first transistor as bipolar transistor or to a drain connection of the first transistor as FET transistor. A resistance is coupled between the drain connection of the second transistor and the collector connection of the third transistor.