Electric Field Semiconductor Doping via Sacrificial Layer
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Solution Overview
Problem
Conventional semiconductor doping methods require high temperatures and vacuum environments, leading to physical damage and high costs, with limited precision in controlling impurity concentration and area coverage.
Innovation Solution
A doping method using an electric field that stacks a sacrificial dielectric layer on a doped layer, applies electrodes to ionize and diffuse doping materials through electrostatic attraction, allowing doping at room temperature and atmospheric pressure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ion implantation is used to precisely control doping amount, then manufacturing precision is improved, but device complexity increases due to physical damage and recovery heating requirements
Solution Approach 1:
The patent extracts the harmful high-temperature heating step from the ion implantation process by using a sacrificial layer that releases dopants through low-temperature thermal diffusion, eliminating the need for recovery heating while maintaining precise doping control
Solution Approach 2:
The sacrificial layer acts as an intermediary between the ion implantation process and the final doped structure, enabling precise dopant delivery without requiring the semiconductor substrate to withstand high-temperature processing
2Ease of manufacture
If thermal diffusion is used to reduce process cost, then ease of manufacture is improved, but manufacturing precision deteriorates due to inability to precisely control impurity concentration
Solution Approach 1:
The patent performs preliminary ion implantation to precisely position dopant atoms at specific depths and concentrations before the thermal diffusion step, ensuring both precise concentration control and process simplicity
Solution Approach 2:
The patent changes the timing and temperature parameters of the diffusion process by using low-temperature thermal diffusion after ion implantation, enabling precise dopant release without the high temperatures that compromise concentration control
3Area of stationary object
If MOCVD is used to evenly dope large areas, then area coverage is improved, but temperature increases to very high process temperatures
Solution Approach 1:
The patent replaces the chemical vapor deposition mechanism of MOCVD with physical ion implantation followed by low-temperature thermal diffusion, achieving large-area doping without very high process temperatures
4Manufacturing precision
If high vacuum environment is used to obtain high-purity doped thin layer, then purity is improved, but device complexity increases due to complicated process and large cost
Solution Approach 1:
The patent uses a disposable sacrificial layer that can be deposited under simple conditions and then removed after releasing dopants, eliminating the need for expensive and complex high-vacuum environments while maintaining high doping purity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise and efficient doping of semiconductor materials without physical damage or high costs, achieving effective impurity distribution and reduced surface roughness while maintaining conductivity.
Implementation Method 1
oxidizing and ionizing the doping material
Implementation Method 2
oxidizing and ionizing the doping material
Implementation Method 3
diffusing the ionized doping material by passing though the sacrificial layer by electrostatic attraction
Implementation Method 4
diffusing the ionized doping material by passing though the sacrificial layer by electrostatic attraction
Implementation Method 5
reducing the diffused doping material in the doped layer
Data Source
AI summary
A doping method using an electric field includes stacking a sacrificial layer on a doped layer, disposing a doping material on the sacrificial layer, disposing electrodes on the doping material and the doped layer, respectively, and doping the doping material into the doped layer through oxidation, diffusion, and reduction of the doping material by the electric field.