Electric Field Gas Sensor with Adsorption Material
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Solution Overview
Problem
Conventional gas sensors face limitations in sensitivity, size, power consumption, and detection capabilities, particularly in detecting gases with low vapor pressure or high concentrations, due to constraints in semiconductor layer thickness and material limitations.
Innovation Solution
An electric field variable gas sensor is developed, comprising a semiconductor substrate, insulating film, semiconductor thin film material, gas molecule adsorption inducing material, and electrodes, where the gas molecule adsorption inducing material changes the device current exponentially with Fermi level changes, enabling enhanced sensitivity and reduced power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the thickness of the semiconductor layer is reduced to enhance sensitivity, then the sensitivity of gas detection is improved, but the manufacturing precision becomes difficult to achieve due to current technology limitations
Solution Approach 1:
The patent introduces a gate electrode as an intermediary component that applies an external electric field to the semiconductor layer. This mediator enables the semiconductor layer to maintain a reasonable thickness (avoiding manufacturing difficulties) while the electric field effect amplifies the sensitivity to gas molecules, resolving the contradiction between thickness and sensitivity.
Solution Approach 2:
The patent changes the electrical parameters (electric field strength via gate voltage) of the semiconductor layer dynamically. By adjusting the gate voltage, the sensitivity can be enhanced without physically reducing the layer thickness, thus avoiding manufacturing precision issues while achieving high sensitivity.
2Measurement precision
If the thickness of the semiconductor layer is reduced to enhance sensitivity, then the sensitivity of gas detection is improved, but the power consumption increases
Solution Approach 1:
The gate electrode serves as a mediator that provides electrical field control. This intermediary mechanism allows sensitivity enhancement through electric field modulation rather than physical thinning, thereby avoiding the exponential increase in power consumption that would result from ultra-thin layer fabrication.
Solution Approach 2:
The patent makes the semiconductor layer's electrical properties dynamic through gate voltage control. This dynamic adjustment allows the system to achieve high sensitivity only when needed, reducing overall power consumption compared to maintaining a permanently ultra-thin structure.
3Device complexity
If conventional gas sensors are used, then the device complexity is low, but the detection capability for trace gases is insufficient
Solution Approach 1:
The patent changes key electrical parameters (applying gate voltage to create strong electric fields) in the conventional sensor structure. This parameter modification enables trace gas detection capability enhancement without fundamentally redesigning the sensor architecture, maintaining low device complexity.
Solution Approach 2:
The patent employs composite material structures (semiconductor layer combined with specific gate electrode configurations and insulating layers) to achieve enhanced detection capability. This composite approach improves performance while keeping the overall device structure relatively simple and manufacturable.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The sensor achieves ultra-high sensitivity, 100 to 10,000 times improvement, and ultra-low power consumption, allowing for the detection of trace gases at ppb or ppt levels, surpassing conventional sensors in performance and functionality.
Implementation Method 1
gas molecule adsorption inducing material changes the device current exponentially with Fermi level changes
Implementation Method 2
electric field variable gas sensor including a gas molecule adsorption inducing material
Data Source
AI summary
An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.