Electric Field Ion Beam Control for Implantation Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
High energy ion implanters face challenges in achieving precise implantation angles and uniform dose distribution due to magnetic field interactions and beam contamination, leading to non-uniform implantation and increased equipment size and power consumption.
Innovation Solution
The implementation of an electric field collimating lens and an electric field energy filter in a U-shaped beamline configuration, which includes a beam scanner with adjustable deflection electrodes, to maintain precise implantation and reduce equipment size and power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a magnetic field-based beam transport system is used, then beam focusing and direction control are achieved, but magnetic field interactions cause beam contamination and non-uniform implantation
Solution Approach 1:
The patent replaces the magnetic field-based beam transport system with an electric field-based system. Specifically, electrostatic lenses and electric field deflectors are used instead of magnetic fields to control and transport the ion beam. This substitution eliminates magnetic field interactions that cause beam contamination while maintaining precise beam focusing and directional control, thereby achieving uniform implantation without harmful magnetic effects.
2Manufacturing precision
If traditional beam transport components are used, then beam control is achieved, but equipment size and power consumption increase
Solution Approach 1:
The patent substitutes traditional magnetic field-based beam control components with electric field-based components. Electrostatic lenses replace magnetic lenses for focusing, and electric field deflectors replace magnetic deflectors for beam steering. This substitution reduces power consumption and equipment size while maintaining implantation precision, as electric field systems require less energy and occupy less space compared to their magnetic field counterparts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures highly precise ion implantation with reduced implantation angle error and power consumption, while allowing for efficient installation and maintenance, and maintaining a stable implantation state even during beam instability.
Implementation Method 1
The present invention employs an electric field collimating lens and an electric field energy filter in a U-shaped beamline configuration
Implementation Method 2
The present invention employs an electric field collimating lens and an electric field energy filter in a U-shaped beamline configuration
Implementation Method 3
which includes a beam scanner with adjustable deflection electrodes
Implementation Method 4
ions are implanted into a semiconductor wafer in a vacuum state so as to add impurities to crystals of the semiconductor wafer
Data Source
AI summary
A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit.