Electro-optical Device Vertical Stacking Aperture Ratio
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Solution Overview
Problem
Existing electro-optical devices face issues with reduced aperture ratio and unstable transistor characteristics due to the arrangement of TFTs and storage capacitors, which affects yield and image quality.
Innovation Solution
The electro-optical device is designed with storage capacitors disposed below transistors on the substrate, allowing efficient hydrogenation and reducing the area needed for transistor and storage capacitor placement, thereby improving the aperture ratio and image quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If storage capacitors are arranged above TFTs in the same pixel portion, then aperture ratio is improved, but hydrogenation of TFT semiconductor layer is blocked resulting in unstable characteristics
Solution Approach 1:
The patent resolves the contradiction by changing the spatial arrangement from a two-dimensional planar layout to a three-dimensional stacked configuration. Storage capacitors are positioned in a different layer (above or below) the TFTs, allowing both components to coexist in the same pixel portion without blocking hydrogenation pathways. This vertical stacking enables effective hydrogenation from the upper layer while maintaining high aperture ratio.
2Ease of manufacture
If TFTs and storage capacitors are arranged in the same layer, then manufacturing is simplified, but aperture ratio is reduced due to increased non-opening regions
Solution Approach 1:
The patent moves storage capacitors from the same layer as TFTs to a different layer (above or below), creating a three-dimensional stacked arrangement. This vertical separation allows both components to share the same pixel portion footprint without increasing non-opening regions, thereby maintaining high aperture ratio while keeping the manufacturing process relatively simple.
3Productivity
If storage capacitors are placed above TFTs to improve aperture ratio, then area efficiency is improved, but hydrogenation is blocked causing yield reduction
Solution Approach 1:
The patent inverts the conventional arrangement by placing storage capacitors below the TFTs instead of above them. This inverted configuration allows hydrogenation to proceed effectively from the upper layer without being blocked by capacitor structures, thereby improving yield while still achieving high area efficiency and aperture ratio.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the yield and image quality by ensuring effective hydrogenation of transistors and increasing the aperture ratio, leading to improved display performance.
Implementation Method 1
a semiconductor layer subjected to hydrogenation performed from an upper layer
Data Source
AI summary
An electro-optical device includes a substrate; a plurality of data lines and a plurality of scanning lines arranged in a pixel region on the substrate; transistors disposed in associated pixel portions in the pixel region on the substrate, the transistors being electrically connected to the data lines and the scanning lines, and the transistors each having a semiconductor layer subjected to hydrogenation performed from an upper layer; storage capacitors disposed below the transistors in the associated pixel portions on the substrate, the storage capacitors being electrically connected to the transistors; and pixel electrodes disposed in the associated pixel portions on the substrate, the pixel electrodes being electrically connected to the transistors and the storage capacitors.