Electro-Optical Device Insulating Layer Impurity Barrier
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Solution Overview
Problem
In electro-optical devices like liquid crystal projectors, impurities in the light-shielding film can diffuse into the base insulating layer, affecting the performance of thin-film transistors (TFTs), particularly when the insulating layer contains high amounts of impurities.
Innovation Solution
The implementation of a translucent substrate with a light-shielding body made of metal, sandwiched between the substrate and the TFT, and two insulating layers with a higher content of a predetermined element in the first insulating layer compared to the second, to reduce the impact of impurities on the TFT performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a light-shielding film is disposed below the TFT via a base insulating layer, then the amount of light incident on the TFT is reduced, but impurities in the light-shielding film can diffuse into the base insulating layer and adversely affect the TFT properties
Solution Approach 1:
An intermediate insulating layer is introduced between the light-shielding film and the base insulating layer. This intermediate layer acts as a barrier that prevents impurities from the light-shielding film from diffusing into the base insulating layer, while still allowing the light-shielding function to operate effectively.
Solution Approach 2:
The single base insulating layer structure is segmented into multiple insulating layers (base insulating layer and intermediate insulating layer). This segmentation allows the system to simultaneously achieve light-shielding functionality and impurity isolation, resolving the contradiction between reducing light incidence and preventing impurity diffusion.
2Device complexity
If one base insulating layer is interposed between the TFT and the light-shielding film, then the structure is simplified, but the TFT is more susceptible to impurities that have diffused into the base insulating layer
Solution Approach 1:
The intermediate insulating layer serves as a protective intermediary that specifically targets and blocks impurity diffusion pathways. This adds minimal structural complexity while effectively reducing the TFT's susceptibility to harmful impurities.
Solution Approach 2:
The intermediate insulating layer is strategically positioned only where impurity diffusion is most critical - between the light-shielding film and the base insulating layer. This localized approach addresses the specific harmful factor without unnecessarily complicating the entire device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the light-shielding properties and reduces the adverse effects of impurities on TFTs, maintaining optimal performance and efficiency in electro-optical devices.
Implementation Method 1
a first insulating layer having insulating properties and disposed between the light-shielding body and the transistor, the first insulating layer being in contact with the light-shielding body
Data Source
AI summary
An electro-optical device includes a translucent substrate, a transistor, a light-shielding body having light-shielding properties, including a metal and disposed between the substrate and the transistor, a first insulating layer having insulating properties and disposed between the light-shielding body and the transistor, the first insulating layer being in contact with the light-shielding body, and a second insulating layer having insulating properties and disposed between the first insulating layer and the transistor, the second insulating layer being in contact with the first insulating layer. A content of a predetermined element that is not an element of a main component in the first insulating layer is higher than a content of the predetermined element in the second insulating layer.