Electro-optical Device Infrared Laser Layer Removal
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Solution Overview
Problem
Existing methods for manufacturing light-emitting devices, such as organic electroluminescent (EL) devices, face challenges in efficiently removing unnecessary light-emitting layers to connect terminals from external devices with sufficient strength and low resistance, as current techniques like UV laser ablation and wet etching are inadequate due to isotropic etching methods and layer immersibility in solvents.
Innovation Solution
An electro-optical device design featuring a main substrate with a light-emitting functional layer, first and second electrode layers, and an insulating protective layer, where through-holes allow for selective removal of the light-emitting functional layer using isotropic etching methods like oxygen plasma etching, ensuring the second electrode layer does not overlap external connection portions, enabling strong and low-resistance connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If UV laser is used to selectively remove the light-emitting layer, then productivity is improved compared to selective application methods, but the removal is not sufficient and connection strength and resistance are inadequate
Solution Approach 1:
The patent changes the wavelength parameter of the laser from UV (excimer or UV-YAG) to infrared (CO2 laser, wavelength 10.6 μm). This parameter change enables sufficient removal of the light-emitting layer while maintaining high productivity, resolving the contradiction between productivity and removal sufficiency.
2Manufacturing precision
If infrared laser is used to remove the layer, then removal capability is improved, but the layer under the target layer is destroyed and processing residue increases
Solution Approach 1:
The patent applies local quality by forming a heat-resistant undercoat layer (silicon oxide or silicon nitride) selectively at positions where the light-emitting layer contacts the conductive layer. This localized protective structure enables deep removal with infrared laser without destroying the underlying anode layer, resolving the contradiction between removal capability and layer destruction.
3Manufacturing precision
If wet etching method is used to selectively remove the light-emitting layer, then removal effectiveness is improved, but the layer can be immersed in moisture or solvent requiring modification
Solution Approach 1:
The patent replaces the chemical wet etching method with physical infrared laser ablation. This substitution eliminates the need for liquid chemicals and complex modification processes, achieving effective removal while simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the productivity and quality of light-emitting devices by allowing for efficient removal of unnecessary light-emitting layers, reducing resistance, and preventing oxidation of the second electrode layer, thus improving connection strength and device performance.
Implementation Method 1
A laser beam 21 for removing the light-emitting functional layer 17 is an infrared laser beam such as a CO2 laser beam
Implementation Method 2
Other examples of the etching method include an oxygen plasma etching method
Data Source
AI summary
An electro-optical device in which a plurality of light-emitting elements including a first electrode layer, a second electrode layer, and a light-emitting functional layer emitting light in accordance with a voltage between the first electrode layer and the second electrode layer are arranged, the device including: a main substrate; the first electrode layer disposed on the main substrate; the light-emitting functional layer disposed on the first electrode layer; the second electrode layer disposed on the light-emitting functional layer; a plurality of lines which is formed below the light-emitting functional layer on the main substrate and which supplies current to the light-emitting elements or controls the light-emitting elements; a conductor for connecting one of the lines to the second electrode layer; and an insulating protective layer which is formed below the light-emitting functional layer and above the first electrode layer and the lines and which partially covers the lines.