Electro-optical Device Light Shielding Grooves
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Solution Overview
Problem
Existing electro-optical devices with light shielding structures suffer from low light shielding properties due to limitations in the extension range of light shielding walls, which affects the pixel opening ratio and light transmission efficiency.
Innovation Solution
The electro-optical device incorporates a substrate body, a transistor with a semiconductor film, a first interlayer insulating film, and light shielding films extending between the substrate body and the insulating film, with first and second light shielding walls formed in grooves within the insulating film to overlap with the semiconductor film, and protruding portions on the semiconductor film to enhance light shielding by extending the light shielding walls to cover a wider area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the light shielding wall is extended between the protruding portions to increase shielding range, then the light shielding property is improved, but the light shielding wall can be extended only for a short distance resulting in limited shielding effectiveness
Solution Approach 1:
The patent introduces a third dimension by forming grooves in the interlayer insulating film and placing light shielding walls within these grooves. This vertical positioning allows the light shielding wall to extend further along the semiconductor film without requiring excessive lateral spacing, effectively increasing the shielding range while maintaining compact pixel structure.
Solution Approach 2:
The light shielding wall is nested within the groove structure of the interlayer insulating film. This nesting approach allows the light shielding wall to be positioned strategically along the semiconductor film, maximizing its shielding effectiveness within the constrained pixel area while avoiding short-circuiting issues.
2Reliability
If the light shielding wall is extended at a position sufficiently spaced apart from the protruding portion, then short-circuiting is avoided, but the interval between the semiconductor film and the light shielding wall becomes wide reducing light shielding property
Solution Approach 1:
The interlayer insulating film acts as an intermediary between the light shielding wall and the semiconductor film. By forming grooves in this insulating film and placing the light shielding wall within them, the patent achieves both electrical insulation (preventing short-circuits) and effective light shielding, as the insulating film material provides both electrical and optical isolation.
3Object-affected harmful factors
If the width of the scan line is increased to improve light shielding, then the light shielding property is improved, but the pixel opening ratio is reduced
Solution Approach 1:
The patent segments the light shielding function by introducing dedicated light shielding walls positioned in grooves along the semiconductor film, separate from the scan line structure. This segmentation allows the scan line width to be reduced (improving pixel opening ratio) while the light shielding walls provide the necessary light shielding protection through their strategic positioning and extension along the semiconductor film.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively shields light incident on the semiconductor film, improving light shielding properties while maintaining a high pixel opening ratio by reducing the width of the scan line and narrowing the interval between light shielding walls and the channel region, thus enhancing the overall light transmission efficiency.
Implementation Method 1
a first light shielding wall provided with a conductive light shielding material in a first groove formed in the first interlayer insulating film so as to overlap in plan view with the light shielding film on a side of the semiconductor film
Data Source
AI summary
In an electro-optical device, a first light shielding wall and a second light shielding wall electrically couple a gate electrode and a scan line inside a first groove and a second groove that pass through a side of a semiconductor film of a transistor and reach a scan line on a lower layer side. A first protruding portion and a second protruding portion for contact with an upper layer side are provided at the semiconductor film. Of the first light shielding wall and the second light shielding wall, the second light shielding wall located on an opposite side to a projection direction of the first protruding portion extends to at least a side of the first protruding portion, and the first light shielding wall located on an opposite side to a projection direction of the second protruding portion extends to at least a side of the second protruding portion.