Electro-Optical Device Light Shielding Segmentation
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Solution Overview
Problem
Active-drive type liquid crystal devices face issues with TFT property changes due to strong light exposure, particularly when the LDD region and gate potential wiring line are closely disposed to improve light shielding properties.
Innovation Solution
The electro-optical device incorporates a semiconductor layer with a drain region, channel region, and LDD region, along with a gate electrode overlapping the channel region, a first light shielding portion electrically coupled to the gate electrode, and a second light shielding portion between the LDD region and the first light shielding portion, which overlaps the LDD region and the first light shielding portion in plan view, to suppress the influence of gate potential on the LDD region and enhance light shielding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the LDD region and the wiring line for gate potential are disposed close to each other to improve light shielding property, then the light shielding property is improved, but the TFT property changes due to strong light exposure
Solution Approach 1:
The light shielding function is divided into two separate components: a first light shielding portion overlapping the channel region and a second light shielding portion overlapping the LDD region. This segmentation allows each portion to independently perform light shielding without requiring close proximity between the LDD region and gate potential wiring line, thereby preventing TFT property changes while maintaining effective light shielding.
Solution Approach 2:
The first light shielding portion acts as an intermediary between the gate electrode and the LDD region. It provides light shielding for the channel region and enables the second light shielding portion to effectively shield the LDD region without requiring the gate potential wiring line to be in close proximity to the LDD region, thus preventing harmful light exposure effects.
2Object-affected harmful factors
If the LDD region and the wiring line for gate potential are disposed too close to each other to improve light shielding property, then the light shielding property is improved, but the TFT property changes due to electrical influence
Solution Approach 1:
The light shielding structure is segmented into two distinct portions with different functions. The first light shielding portion is associated with the gate electrode and shields the channel region, while the second light shielding portion independently shields the LDD region. This segmentation eliminates the need for close spacing between the LDD region and gate potential wiring line, preventing electrical influence on TFT properties while maintaining light shielding effectiveness.
Solution Approach 2:
The first light shielding portion serves as an intermediary structure that provides light shielding without requiring direct close proximity between electrical components. This allows the second light shielding portion to effectively shield the LDD region from light while maintaining adequate spacing to prevent electrical influence on TFT characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves both desired TFT properties and improved light shielding, preventing peripheral circuit malfunction and maintaining high display contrast by effectively blocking stray light.
Implementation Method 1
a second light shielding portion disposed between the LDD region and the first light shielding portion and overlapping the LDD region and the first light shielding portion in plan view
Data Source
AI summary
Included are: a semiconductor layer including a drain region, a channel region, and a second LDD region between the drain region and the channel region; a gate electrode disposed overlapping the channel region; a gate wiring line electrically coupled to the gate electrode; and a second light shielding portion disposed between the second LDD region and the gate wiring line and overlapping the second LDD region and the gate wiring line in plan view.