Electro-optical Device Light Shielding Wall Transistor Design
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Solution Overview
Problem
Existing electro-optical devices face a challenge in achieving a high pixel opening ratio while maintaining effective light shielding, as extending the light shielding wall to enhance light shielding properties can lead to short-circuiting and require increasing the width of the scan line, thereby reducing the pixel opening ratio.
Innovation Solution
The electro-optical device incorporates a substrate body with a transistor, interlayer insulating layers, and light shielding walls that penetrate through the insulating layers to reach the scan line, allowing for a wider extension of light shielding without increasing the scan line width, thereby maintaining a high pixel opening ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If the light shielding wall is extended longer along the semiconductor layer to enhance light shielding effect, then the light shielding property is improved, but the protruding portion and the light shielding wall may be short-circuited
Solution Approach 1:
The light shielding function is segmented into multiple components: the scan line provides primary light shielding, while the light shielding wall provides supplementary shielding at critical positions. This segmentation allows each component to be optimized independently for its specific function without compromising the other.
Solution Approach 2:
The first interlayer insulating layer acts as an intermediary between the substrate body and the semiconductor layer, providing electrical isolation that prevents short-circuiting between the light shielding wall and the protruding portion while still allowing the light shielding wall to extend along the semiconductor layer for effective light blocking.
2Reliability
If the width of the scan line is increased to prevent short-circuiting between the protruding portion and the light shielding wall, then the reliability is improved, but the pixel opening ratio is reduced
Solution Approach 1:
The light shielding function is divided between the scan line and the light shielding wall, allowing the scan line to maintain a narrow width for high pixel opening ratio while the light shielding wall provides additional shielding where needed, preventing short-circuits without requiring increased scan line width.
Solution Approach 2:
The light shielding wall extends in the width direction of the semiconductor layer, providing an additional spatial dimension for light shielding. This allows the scan line to remain narrow in the width direction while still achieving effective light shielding through the combination of the scan line and the laterally extending light shielding wall.
3Object-affected harmful factors
If the width of the scan line is increased to extend the light shielding wall at a position spaced from the protruding portion, then the light shielding property is improved, but the pixel opening ratio is reduced
Solution Approach 1:
The light shielding function is segmented between the scan line and the light shielding wall, allowing the scan line to maintain a narrow width for high pixel opening ratio while the light shielding wall provides additional shielding where needed, preventing short-circuits without requiring increased scan line width.
Solution Approach 2:
The light shielding wall extends in the width direction of the semiconductor layer, providing an additional spatial dimension for light shielding. This allows the scan line to remain narrow in the width direction while still achieving effective light shielding through the combination of the scan line and the laterally extending light shielding wall.
Data Source
AI summary
In an electro-optical device, a first light shielding wall and a second light shielding wall pass through sides of a semiconductor layer of a transistor respectively, and reach a scan line on a lower layer side. In a second interlayer insulating layer, a first contact hole and a second contact hole that reach a first source drain region and a second source drain region of the semiconductor layer respectively are provided. Respective widths of the first source drain region and the second source drain region are equal to or less than respective widths of the first contact hole and the second contact hole. Accordingly, the first light shielding wall and the second light shielding wall extend to sides of the first contact hole and the second contact hole respectively.