Electro-optical Device Noise Isolation via Segmented Well Structure
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Solution Overview
Problem
When pixel circuits are formed on a semiconductor substrate, noise interference from the driving circuit can affect the display unit, leading to potential issues with display quality and increased pressure resistance requirements for transistors, especially in achieving high luminance and resolution.
Innovation Solution
The electro-optical device features a display unit with pixel circuits formed in a single well, surrounded by wells of different polarity, and a driving circuit with transistors in separate wells, ensuring the substrate potential is stabilized and noise is minimized, allowing for efficient current supply to light emitting elements without separate feeder lines and maintaining pressure resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the pixel circuit is formed on a semiconductor substrate, then display size reduction and high resolution display are achieved, but noise interference from the driving circuit affects the display unit
Solution Approach 1:
The patent divides the semiconductor substrate into distinct regions: a first well region for the display unit and a second well region for the driving circuit. This spatial segmentation isolates the noise-sensitive display unit from the noise-generating driving circuit, allowing high-resolution display formation while minimizing noise interference through physical separation of functional blocks.
Solution Approach 2:
The patent introduces a third well region positioned between the first well (display unit) and second well (driving circuit). This intermediary well acts as a buffer zone that further isolates the display unit from noise generated by the driving circuit, enabling high-resolution display while providing additional noise protection through the intermediate shielding structure.
2Device complexity
If the driving circuit is integrated on the same substrate, then device complexity is reduced, but noise transmission to the display unit increases
Solution Approach 1:
The patent segments the integrated circuit into functionally separate well regions: the first well for display pixel circuits and the second well for driving circuits. This segmentation maintains integration on a single substrate while creating electrical and physical boundaries that prevent noise transmission, thus reducing device complexity without compromising noise isolation.
Solution Approach 2:
The patent applies different well structures to different functional areas: the display unit region uses a first well configuration optimized for low noise, while the driving circuit region uses a second well configuration optimized for signal processing. This local differentiation allows each region to operate with optimal characteristics, maintaining integration while minimizing noise interference through region-specific structural optimization.
3Ease of manufacture
If a single well is used for all transistors, then manufacturing process is simplified, but noise from driving circuit affects display transistors
Solution Approach 1:
The patent divides the well structure into multiple segmented regions: a first well for display transistors and a second well for driving circuit transistors. This segmentation maintains relatively simple manufacturing processes while creating distinct electrical zones that prevent noise coupling, thus preserving ease of manufacture without sacrificing noise isolation performance.
Data Source
AI summary
An electro-optical device includes a display unit in which a plurality of pixel circuits is arranged; and a driving circuit that is disposed to be distanced from the display unit and outputs a signal for driving the plurality of pixel circuits. The display unit and the driving circuit are formed on a first surface of a semiconductor substrate. Each of the pixel circuits has a first transistor, the driving circuit has a second transistor, and the first transistor is formed in a first well and a first substrate potential is supplied. The second transistor is formed in a second well, the first well has the same conductivity type as the second well has, and the first well and the second well are separated from each other.