Electro-optical Device Semiconductor Layer Displacement for Resolution
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Solution Overview
Problem
In liquid crystal devices, reducing pixel pitch to enhance image resolution is limited by the need to maintain the size of field-effect transistors, as reducing the semiconductor layer length can lead to decreased source-drain breakdown voltage.
Innovation Solution
The design includes an element substrate with field-effect transistors where the semiconductor layers of adjacent pixels are displaced and extended to overlap each other, allowing the semiconductor layers to be longer than the pixel pitch without reducing the breakdown voltage, enabling pixel pitch reduction without degrading transistor characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the pixel pitch is reduced to increase image resolution, then the image resolution is improved, but the length of the semiconductor layer must be reduced which causes a decrease in source-drain breakdown voltage
Solution Approach 1:
The patent applies dimensionality change by extending the semiconductor layer in the second direction (perpendicular to the first direction) to span across multiple pixels. This allows the semiconductor layer length to be increased in a different dimension rather than being constrained by the pixel pitch in the first direction, thereby resolving the contradiction between reduced pixel pitch and maintained breakdown voltage
Solution Approach 2:
The semiconductor layer serves multiple functions: it acts as the active channel for the field-effect transistor in its own pixel and simultaneously serves as part of the structure for adjacent pixels. This multi-functionality allows the semiconductor layer to be extended beyond the boundaries of a single pixel, enabling longer channel length without increasing pixel pitch
2Quantity of substance
If the pixel pitch is reduced, then the density of pixels is improved, but the size of the field-effect transistor must be reduced which degrades transistor characteristics
Solution Approach 1:
The invention extends the semiconductor layer in the second direction to allow field-effect transistors to maintain their size and characteristics while pixels are packed more densely in the first direction. This dimensional extension enables pixel density improvement without compromising transistor performance
Solution Approach 2:
The patent merges the structure of adjacent pixels by having the semiconductor layer of one pixel extend into the region of the adjacent pixel. This merging allows shared structural elements to serve multiple pixels, increasing pixel density while maintaining sufficient transistor size for reliable operation
Data Source
AI summary
An electro-optical device includes an element substrate having a first signal line; a second signal line extending in a second direction crossing the first signal line; a first field-effect transistor including a first semiconductor layer extending in a direction crossing the second direction; a second field-effect transistor including a second semiconductor layer extending in the direction crossing the second direction; a first pixel electrode is adjacent to a second pixel electrode. The first semiconductor layer and the second semiconductor layer are displaced from each other in the second direction. An end of the first semiconductor layer facing toward the second pixel electrode is closer to the second pixel electrode than an end of the second semiconductor layer facing toward the first pixel electrode.