Electrochemical Cu2O Semiconductor Layer Formation in TFTs
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Solution Overview
Problem
Current methods for forming metal oxide semiconductor active layers in TFTs involve complex processes like coating and etching, which are inefficient and can be sensitive to metal diffusion, limiting the stability and performance of the semiconductor layer.
Innovation Solution
A method involving electrochemical reaction to form a Cu2O semiconductor active layer by converting a Cu metallic material into Cu2O, which reduces the number of patterning processes and avoids sensitivity to metal diffusion, using a single patterning process for forming the source, drain, and active layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If coating and etching processes are used to form metal oxide semiconductor active layers, then the semiconductor layer can be formed with controlled pattern, but the manufacturing process becomes complex and inefficient
Solution Approach 1:
The patent extracts the semiconductor active layer formation from the traditional coating-etching sequence by directly forming the metal oxide semiconductor layer through electrochemical oxidation of metal layers, eliminating the need for separate coating and etching processes while maintaining pattern control
Solution Approach 2:
The patent replaces the mechanical coating and etching processes with an electrochemical oxidation process, where metal layers are converted to metal oxide semiconductor layers through electrochemical reaction, simplifying the manufacturing workflow while achieving precise pattern formation
2Reliability
If traditional coating and etching methods are used, then the semiconductor layer can be formed, but the process is sensitive to metal diffusion which limits stability
Solution Approach 1:
The patent changes the formation parameters by using electrochemical oxidation potential and pH control to convert metal layers into metal oxide semiconductor layers in-situ, avoiding the metal diffusion issues associated with traditional thermal processing of coated layers
Solution Approach 2:
The patent introduces an electrochemical oxidation process as an intermediary step that converts metal layers to metal oxide semiconductor layers without direct contact or diffusion between metal layers, using electrochemical potential as the mediating mechanism
3Manufacturing precision
If multiple patterning processes are used to form source, drain, and active layers, then each component can be precisely defined, but the manufacturing efficiency decreases
Solution Approach 1:
The patent merges the formation of source, drain, and active layers into a single electrochemical oxidation process step, where all components are defined simultaneously through one patterning and oxidation sequence, eliminating multiple separate patterning processes
Solution Approach 2:
The patent creates a universal electrochemical oxidation process that can define source, drain, and active regions in a single operation, making the process multi-functional and eliminating the need for separate specialized steps for each component
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, enhances stability by balancing Cu2O and Cu metal contact, and reduces the risk of metal diffusion, leading to improved performance and efficiency in TFT production.
Implementation Method 1
placing the substrate provided with a first pattern of the Cu metallic material in water and electrifying the first pattern, whereby the Cu metallic material is subjected to electrolytic reaction with the water to form the Cu2O semiconductor material
Implementation Method 2
the Cu metallic material is subjected to electrolytic reaction with the water to form the Cu2O semiconductor material
Data Source
Figure 1a~2a
Figure 2b~2e
Figure 3~5
AI summary
A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The method for manufacturing the TFT includes: forming a gate electrode (20), a gate insulating layer (30), a metal oxide semiconductor active layer (402), a source electrode (501) and a drain electrode (502) on a substrate (10); the forming the metal oxide semiconductor active layer (402) includes: forming the metal oxide semiconductor active layer (402) by electrochemical reaction. The method for manufacturing the TFT is applied in the production of the TFT and the array substrate and the display apparatus comprising the TFTs and provides a new method for forming the metal oxide semiconductor active layer.