Electrochemical Etching Device with Integrated Thickness Measurement
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Solution Overview
Problem
Conventional semiconductor processes face challenges in measuring the thickness of metal layers during etching processes on flexible or ultra-thin glass substrates, as chemical mechanical polishing can cause substrate deflection or breakage, and existing etching processes lack on-line thickness measurement capabilities, leading to increased complexity and cost due to the need for etching stop layers.
Innovation Solution
An electrochemical processing device with a jig and controller that simultaneously performs etching and measures the thickness of metal layers using measuring electrodes connected to a current supply unit, allowing for on-line thickness measurement during the electrochemical process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical mechanical polishing process is performed to remove excess metal, then manufacturing precision is improved, but substrate integrity deteriorates due to deflection or breakage
Solution Approach 1:
The patent replaces the mechanical chemical mechanical polishing (CMP) system with an electrochemical etching system. The etching process uses electrochemical reactions to remove metal layers without requiring mechanical contact or pressure, thereby eliminating the substrate deflection and breakage problems associated with mechanical polishing while maintaining precise thickness control through electrochemical parameters
Solution Approach 2:
The patent introduces an electrolyte solution as an intermediary medium between the electrode and substrate. This electrolyte enables metal removal through electrochemical reactions at the substrate surface without requiring direct mechanical contact, thus protecting the substrate from mechanical stress while achieving precise metal layer removal
2Strength
If etching process is used to avoid substrate deflection or breakage, then substrate integrity is improved, but measurement capability deteriorates due to lack of on-line thickness measurement
Solution Approach 1:
The patent merges the etching function and measurement function into a single integrated electrochemical processing device. The measuring electrodes are incorporated directly into the etching chamber, enabling simultaneous or sequential thickness measurement and etching operations without requiring separate measurement equipment or process steps
Solution Approach 2:
The electrochemical processing device is designed to perform multiple functions: it can etch metal layers using the processing electrodes and simultaneously measure metal layer thickness using the measuring electrodes. This multi-functional design eliminates the need for separate measurement devices and enables on-line thickness monitoring during the etching process
3Manufacturing precision
If etching stop layer is formed to prevent over-etching, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent implements a feedback control system where the controller receives thickness measurement data from the measuring electrodes during the etching process and uses this information to control the etching duration and parameters. This real-time feedback enables precise etching depth control without requiring additional etching stop layers, thereby maintaining manufacturing precision while reducing process complexity
Solution Approach 2:
The measuring electrodes continuously monitor the metal layer thickness during etching, providing self-measurement capability that eliminates the need for external measurement equipment or post-process inspection. The system automatically tracks thickness changes and can control the etching process based on this self-provided measurement data
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate and simultaneous etching and thickness measurement of metal layers on both sides of the substrate, reducing the need for etching stop layers and minimizing substrate damage, thereby simplifying and cost-effectively managing semiconductor processes.
Implementation Method 1
the substrate is etched using an etching process (e.g., an electrolytic etching process)
Implementation Method 2
the controller provides a measuring current to the measuring electrode to measure the thickness of the metal layer of the substrate
Data Source
AI summary
An electrochemical processing device includes a current supply unit, a jig, and a controller. The current supply unit provides current for an electrochemical process. The jig includes a clamping region for clamping a substrate, a plurality of processing electrodes disposed in the clamping region and connected to the current supply unit, and a plurality of measuring electrodes disposed in the clamping region. The controller is connected to the plurality of measuring electrodes. When the jig clamps the substrate to perform the electrochemical process, the controller provides a measuring current to the measuring electrode to measure the thickness of the metal layer of the substrate.