Electrochromic Glass Laser Ablation Without TCO Layer Damage
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Solution Overview
Problem
Current fabrication techniques for electrochromic devices and other thin-film devices with sandwiched conductor layers lack efficiency in material removal and edge treatment, leading to issues like unwanted coloration and charge buildup, and require complex laser scribing and focusing systems.
Innovation Solution
A method involving a laser beam with a near-infrared wavelength of 1.4 to 3 μm is used to selectively remove material from electrochromic devices, creating ablation regions with orthogonal or tapered edges without damaging the first transparent conductive layer, and forming bus bar pad expose regions, which simplifies the fabrication process and reduces the need for additional electrical isolation scribes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional fabrication techniques are used for material removal, then the process is simpler, but material removal efficiency is low and edge treatment is poor
Solution Approach 1:
The patent changes the laser wavelength parameter to the near-infrared range (1.4-3 μm) to achieve selective absorption by the electrochromic material while minimizing damage to transparent conductive layers. This parameter change enables efficient material removal with improved edge quality without requiring complex multi-step fabrication processes
Solution Approach 2:
The patent replaces conventional mechanical or chemical etching methods with laser ablation technology. The laser beam directly removes material through photothermal effects, eliminating the need for mechanical contact or chemical baths, thereby improving both efficiency and edge precision
2Productivity
If high energy density is applied for rapid material removal, then productivity increases, but damage to the first transparent conductive layer occurs
Solution Approach 1:
The patent creates local quality differentiation by selecting a laser wavelength that is selectively absorbed by the electrochromic material (local target) while being reflected or transmitted by the transparent conductive layers. This allows high energy density to be applied locally to the electrochromic material without affecting the conductive layers
Solution Approach 2:
By changing the laser wavelength to the near-infrared range (1.4-3 μm), the patent achieves selective interaction with different materials. The electrochromic material absorbs this wavelength efficiently for rapid ablation, while the transparent conductive layers do not absorb it, preventing damage even at high energy densities
3Manufacturing precision
If complex laser scribing and focusing systems are used, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The patent achieves high manufacturing precision by optimizing the laser wavelength parameter rather than complicating the optical system. The near-infrared wavelength (1.4-3 μm) provides inherent selectivity and sufficient focus capability, eliminating the need for complex focusing mechanisms or multiple laser systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise and efficient material removal, reducing complexity in the fabrication process, minimizing damage to the first transparent conductive layer, and improving the separation between conductive layers, thus enhancing the manufacturing efficiency and quality of electrochromic devices.
Implementation Method 1
The material may be removed by laser ablation
Implementation Method 2
the laser beam comprises projected light, the projected light having a selected near-infrared wavelength in the range of about 1.4 to about 3 μm
Data Source
AI summary
Techniques for laser processing of a workpiece including electrochromic glass or other thin-film devices where one or more layers are sandwiched between two thin-film conductive layers include directing a laser beam from a laser source onto a surface of the workpiece, wherein the laser beam comprises projected light, the projected light having a selected near-infrared wavelength in the range of about 1.4 to about 3 μm. Where the workpiece comprises an electrochromic device including an electrochromic stack disposed between a first transparent conductive layer, distal from the laser source, and a second transparent conductive layer, proximal to the laser source, removing the material includes removing a portion of the second transparent conductive layer and a portion of the electrochromic stack to expose a surface of the first transparent conductive layer without damaging the first transparent conductive layer.