Semiconductor Electrode Bonding With Uneven Oxide Film Heat Path
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Solution Overview
Problem
Existing semiconductor devices with uneven oxide films on heat sinks have reduced heat dissipation paths due to solder's low wettability on thin film portions, limiting their thermal management capabilities.
Innovation Solution
A semiconductor device incorporating a sintered member with a sintered member pressed and expanded between the main electrode and wiring member, utilizing an uneven oxide film with a thick and thin film portion to enhance heat dissipation by creating a contact portion that serves as a heat dissipation path.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If an uneven oxide film is formed on the heat sink surface, then heat dissipation path is created, but solder wettability deteriorates on thin film portions
Solution Approach 1:
A sintered member is introduced as an intermediary between the semiconductor element and the wiring member. This sintered member has high thermal conductivity to facilitate heat dissipation while providing a stable bonding interface that does not suffer from the wettability issues affecting solder on thin oxide film portions. The sintered member effectively mediates between the thermal management requirements and the bonding reliability requirements.
Solution Approach 2:
The uneven oxide film is designed with spatially varying thickness, creating thick film portions and thin film portions with different functions. The thick film portions provide heat dissipation pathways, while the sintered member is positioned to contact specifically at thin film portions where it provides reliable bonding without relying on solder wettability. This local differentiation allows each region to optimize for its specific function.
2Reliability
If solder is used to bond the main electrode and wiring member, then electrical connection is achieved, but heat dissipation is limited due to low wettability on thin film portions
Solution Approach 1:
The sintered member serves as an intermediary bonding element between the semiconductor element's main electrode and the wiring member. It provides both reliable electrical connection through sintered bonding and superior heat dissipation through its high thermal conductivity, replacing the inadequate solder joint while maintaining electrical functionality.
Solution Approach 2:
The bonding structure uses a composite approach combining the semiconductor element, the sintered member with specific thermal and electrical properties, and the wiring member. This composite structure leverages the complementary properties of each material: the semiconductor element for electronic function, the sintered member for thermal management and bonding, and the wiring member for electrical connection, achieving both reliable electrical connection and effective heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves improved heat dissipation properties by utilizing the sintered member's expanded contact with the thin film portion, reducing solder spread and enhancing thermal management.
Implementation Method 1
The sintered member is disposed between the first main electrode and the wiring member to bond the first main electrode and the wiring member
Implementation Method 2
The sintered member is in contact with the thin film portion... creating a contact portion between the sintered member and the thin film portion, thereby serving as a heat dissipation path
Data Source
AI summary
A semiconductor device includes a semiconductor element, a wiring member, a sintered member between a first main electrode of the semiconductor element and the wiring member, and a sealing body. The wiring member includes a base material, a metal film on a face of the base material, and an uneven oxide film. The uneven oxide film includes a thick film portion and a thin film portion. An opposing face of the wiring member opposing the semiconductor element includes a mounting portion to which the first main electrode is bonded, an outer peripheral portion formed with the thick film portion and surrounding the semiconductor element, and an intermediate portion formed with the thin film portion between the mounting portion and the outer peripheral portion. The sintered member overlaps with the mounting portion and the intermediate portion in the plan view, and is in contact with the thin film portion.