Semiconductor Electrode Bridge Layout for Leakage Current Suppression
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Solution Overview
Problem
Conventional semiconductor devices with multiple semiconductor elements experience significant leakage current, leading to noise issues due to parasitic capacitance between conductor relay regions and heat sinks, which affects the performance and reliability of power conversion applications.
Innovation Solution
A semiconductor device configuration featuring a substrate with a conductive member spaced apart from the substrate and bonded to the obverse electrodes of semiconductor elements, with differing polarities and an exposed portion between wiring layers, reducing parasitic capacitance and leakage current by increasing the distance between the conductive member and the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heat sink is attached directly to the substrate via metal patterns, then heat dissipation is improved, but parasitic capacitance between conductor relay regions and heat sink increases causing leakage current
Solution Approach 1:
The patent introduces an insulating substrate as an intermediary between the heat sink and the conductor relay regions. This insulating substrate physically separates the conductive paths from the heat sink, eliminating the parasitic capacitance that causes leakage current while still allowing thermal conduction through dedicated heat dissipation paths.
Solution Approach 2:
The patent segments the substrate into distinct functional regions: an insulating substrate for electrical isolation, separate metal patterns for signal conduction, and dedicated heat dissipation paths. This segmentation allows heat sink attachment for thermal management while preventing electrical coupling between conductor relay regions and heat sink.
2Area of stationary object
If conductor relay regions are placed close to heat sink for compact design, then device size is reduced, but noise from leakage current increases
Solution Approach 1:
The insulating substrate serves as a mediator that allows compact arrangement of components while maintaining electrical isolation. The heat sink can be positioned close to the conductor relay regions for compact design, but the insulating substrate prevents parasitic capacitance formation, thereby eliminating noise from leakage current.
3Productivity
If voltage change is significant in conductor relay region, then switching function is improved, but leakage current from heat sink increases
Solution Approach 1:
The insulating substrate acts as an intermediary that allows significant voltage changes in the conductor relay regions for effective switching operation, while simultaneously preventing these voltage changes from inducing leakage current through the heat sink by eliminating the parasitic capacitance path.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces noise caused by leakage current, enhances heat conduction efficiency, and protects semiconductor elements from surge voltages while maintaining efficient power conversion.
Implementation Method 1
The above-described conventional semiconductor device has a parasitic capacitance between a particular conductor relay region and the heat sink
Implementation Method 2
When voltage change is significant in the conductor relay region, leakage current from the heat sink may occur
Data Source
AI summary
A semiconductor device includes: a substrate having an obverse surface; a first wiring layer on the obverse surface; a second wiring layer on the obverse surface, separated from the first wiring layer; a first semiconductor element having mutually opposite first obverse electrode and first reverse electrode, with the first reverse electrode bonded to the first wiring layer; a second semiconductor element having mutually opposite second obverse electrode and second reverse electrode, with the second reverse electrode bonded to the second wiring layer; and a conductive member separated from the substrate and bonded to the first and the second obverse electrodes. The first obverse electrode and the second obverse electrode have different polarities. The substrate includes an exposed portion between the first wiring layer and the second wiring layer. The conductive member overlaps with the exposed portion as viewed in the thickness direction of the substrate.