Electrode Collector Etching with Fluorine Mixed Gas
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Solution Overview
Problem
Existing methods for manufacturing electrode collectors, such as those used in lithium-ion batteries, face productivity issues due to low etching rates when removing oxide films from aluminum or aluminum alloy surfaces, which hinders the efficient formation of a conductive carbon overcoat necessary for optimal performance.
Innovation Solution
A method involving a mixed gas atmosphere of fluorine and inert gases is used to dry etch the substrate surface, followed by forming a carbon film in the same chamber, increasing the etching rate and allowing for a highly conductive carbon film to be deposited efficiently, thereby improving the productivity of the electrode collector manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sputter ion beam etching with inert gas is used to remove oxide film, then the oxide film can be removed, but the etching rate is low and productivity decreases
Solution Approach 1:
The patent changes the chemical composition of the etching gas from inert gas alone to a mixed gas containing fluorine (such as CF4, SF6, or C2F6) and inert gas (such as Ar). This parameter change in gas composition enables significantly higher etching rates while maintaining effective oxide film removal, directly resolving the contradiction between reliability of oxide removal and productivity through etching speed improvement
2Reliability
If etching is performed for a long time to remove oxide film, then the oxide film can be reliably removed, but the manufacturing time increases and productivity decreases
Solution Approach 1:
By changing the etching gas to a fluorine-containing mixed gas, the patent achieves rapid etching rates (20-40 nm/min or higher) that enable complete oxide film removal in much shorter times. This allows the etching process to be performed in-line suitable for continuous manufacture, resolving the contradiction between reliable oxide removal and manufacturing time
3Reliability
If carbon film is formed on etched substrate, then the conductive performance is improved, but the process complexity increases
Solution Approach 1:
The patent combines the etching process and carbon film formation process into a single integrated chamber. The substrate is transferred from the etching chamber to the carbon deposition chamber without exposure to air, merging two separate manufacturing steps into one continuous in-line process. This reduces process complexity and prevents oxide reformation while maintaining improved conductive performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the etching rate, allowing for the rapid removal of oxide films and the formation of a highly conductive carbon film on the electrode collector, improving its collecting performance and manufacturing efficiency.
Implementation Method 1
creating a mixed gas atmosphere of a fluorine gas and an inert gas in the chamber, and dry etching a surface of the arranged substrate in the atmosphere
Implementation Method 2
dry etching a surface of the arranged substrate in the atmosphere
Implementation Method 3
forming a carbon film on the surface of the dry etched substrate
Implementation Method 4
forming a carbon film on the surface of the dry etched substrate
Data Source
AI summary
An electrode collector manufacturing apparatus (50) includes a chamber (51), the inside of which can be reduced in pressure, a substrate retaining mechanism (55) that retains a conductive substrate (12), and a gas introducing mechanism (54) that introduces a fluorine gas and an inert gas into the chamber (51). Inside the chamber (51) are provided an etching portion (52) that etches a surface of the substrate (12), and carbon film forming portions (56a) and (56b) that form a carbon film on the surface of the etched substrate (12). The gas introducing mechanism (54) is structured to create in the chamber a mixed gas atmosphere in which the fluorine and the inert gas are mixed at a predetermined molar ratio.