Main Electrode Conductive Layer for Low-Resistance Bus Bar Contact
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Solution Overview
Problem
Existing methods for reducing contact resistance between a bus bar and a main electrode in semiconductor devices are ineffective when the electrodes have irregularities, leading to increased contact thermal resistance.
Innovation Solution
A semiconductor device configuration where a conductive material is applied to the front surface of the main electrode exposed from the case, allowing the main electrode to contact the bus bar through the conductive material, even if the electrodes have irregularities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If direct contact between main electrode and bus bar is used, then device complexity is reduced, but contact resistance increases when irregularities are present
Solution Approach 1:
A conductive material is introduced as an intermediary substance between the main electrode and the bus bar. This conductive material fills in the irregularities and gaps on the contact surfaces, ensuring consistent electrical contact even when the electrode or bus bar surfaces are not perfectly flat, thereby reducing contact resistance without significantly increasing structural complexity.
2Ease of manufacture
If direct contact between main electrode and bus bar is used, then manufacturing process is simplified, but contact thermal resistance increases when irregularities are present
Solution Approach 1:
The conductive material serves as a thermal intermediary that bridges the gap between the main electrode and bus bar surfaces. By applying this material to the front surface of the main electrode, thermal contact resistance is reduced as the material conforms to surface irregularities and provides a continuous thermal pathway, while the manufacturing process remains relatively simple through application processes like screen printing or paste deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration maintains a consistent contact area between the main electrode and the bus bar, effectively reducing contact resistance and contact thermal resistance, thereby suppressing temperature rise within the semiconductor device.
Implementation Method 1
the main electrode contacts the bus bar through the conductive material, so even if the main electrode or the bus bar has irregularities, the contact area between the main electrode and the bus bar does not reduce, thereby reducing the contact resistance
Implementation Method 2
thereby reducing the contact resistance or contact thermal resistance
Data Source
AI summary
The technique disclosed in the present specification is a technique for effectively reducing resistance even when the electrode shape has irregularities. A technique disclosed in the present specification is a semiconductor device includes a semiconductor chip, a case that houses the semiconductor chip therein, a main electrode electrically connected to the semiconductor chip via a wire and partially exposed to outside from the case, and a conductive material applied to a front surface of the main electrode exposed from the case, in which the front surface of the main electrode is the surface connected to a bus bar.