Semiconductor Electrode Grounding for Stable DC Chucking Loops
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Solution Overview
Problem
Conventional semiconductor processing apparatuses face challenges in forming a stable direct current loop due to ceramic side walls that hinder free conduction of charges, affecting electrostatic absorption and release efficiency and process stability.
Innovation Solution
The semiconductor processing apparatus includes a wafer pocket with a lower electrode coupled to a direct-current power supply and an upper electrode grounded through a low-pass filter, which provides a stable direct current loop by allowing direct current to flow to the ground while isolating radio frequency currents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the upper electrode is used as a radio frequency electrode coupled with a matching circuit, then radio frequency power can be applied for plasma generation, but capacitance isolation blocks direct current flow, affecting electrostatic absorption stability
Solution Approach 1:
The invention segments the electrical functions by creating separate pathways: the upper electrode handles radio frequency power delivery through the matching circuit, while the direct current path is established independently through the lower electrode-wafer-pocket-ground sequence. This segmentation allows both radio frequency operation and stable direct current for electrostatic absorption to coexist without interference.
Solution Approach 2:
The wafer and wafer pocket serve as intermediary elements that enable direct current conduction independently of the radio frequency matching circuit. This intermediary path bypasses the capacitance isolation issue, allowing direct current to flow through the wafer itself while radio frequency operations proceed through the upper electrode and matching circuit.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the stability of the direct current loop, improves electrostatic absorption and release functions, and increases the stability and efficiency of the semiconductor processing apparatus.
Implementation Method 1
the upper electrode is grounded through a low-pass filter
Implementation Method 2
a direct current needs to pass through a direct-current power supply, a surface of a wafer pocket, plasma, and a ground to form a direct current loop
Implementation Method 3
is used for clamping a wafer in a smooth and uniform manner by using an electrostatic adsorption principle
Implementation Method 4
applying a voltage to the lower electrode in the wafer pocket by the direct-current power supply, to absorb the wafer on a surface of the wafer pocket
Implementation Method 5
a direct current needs to pass through a direct-current power supply, a surface of a wafer pocket, plasma, and a ground to form a direct current loop
Implementation Method 6
generate plasma between the upper electrode and the wafer
Data Source
AI summary
This application relates to a semiconductor processing apparatus and method. In an embodiment of this application, the semiconductor processing apparatus includes: a wafer pocket provided with a lower electrode, where the lower electrode is coupled to a direct-current power supply; and an upper electrode disposed opposite to the wafer pocket, where the upper electrode is coupled to a radio frequency generator through a matching circuit, and is grounded through a low-pass filter.