Electrode Layer Profile Control for Uniform Semiconductor Capacitors

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Solution Overview

Problem

The challenge in semiconductor manufacturing lies in forming reliable devices at increasingly smaller sizes due to the complexity and difficulty of fabrication processes as feature sizes decrease, affecting the stability and uniformity of electrode layers in semiconductor devices.

Innovation Solution

A process involving physical vapor deposition and ion bombardment is used to form electrode layers with varying thicknesses, where the deposition rate is controlled to prevent fractures and cracks, and ion bombardment modifies the layer profiles to improve thickness uniformity and stability, specifically by making the sidewall portions thicker than the top and bottom portions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If physical vapor deposition is used to form electrode layers at smaller sizes, then functional density increases, but thickness uniformity and stability deteriorate

Engineering Contradiction:

Improvefunctional densityVSAvoidthickness uniformity

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent applies local quality by creating different thickness profiles in different regions of the electrode layer. The top portion has a first thickness, the bottom portion has a second thickness, and the sidewall portion has a third thickness that is greater than both the first and second thicknesses. This non-uniform thickness distribution is intentionally designed to compensate for scaling effects and maintain stability at smaller feature sizes while achieving high functional density.

Inventive Principle:

Principle #3Local quality

2Productivity

If feature sizes are decreased to increase functional density, then production efficiency improves, but fabrication reliability deteriorates

Engineering Contradiction:

Improveproduction efficiencyVSAvoidfabrication reliability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent employs parameter changes by modifying the thickness parameters of the electrode layer at different locations. By making the sidewall portion thicker than both the top and bottom portions, the structure gains enhanced mechanical stability and reliability. This parameter modification allows the device to maintain fabrication reliability even as feature sizes are reduced to increase production efficiency.

Inventive Principle:

Principle #35Parameter changes

3Length of moving object

If electrode layer thickness is reduced for scaling, then device size decreases, but stability and uniformity deteriorate

Engineering Contradiction:

Improvedevice sizeVSAvoidelectrode layer stability

Core Design Contradiction:

Length of moving objectVSStability of the object's composition

Solution Approach 1:

The patent applies asymmetry by creating an electrode layer with intentionally unequal thicknesses at different locations. The sidewall portion is made asymmetrically thicker than both the top and bottom portions. This asymmetric thickness distribution compensates for the reduced overall device size, maintaining structural stability and preventing uniformity issues that would otherwise occur with simple thinning of the entire layer.

Inventive Principle:

Principle #4Asymmetry

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the thickness uniformity and stability of electrode layers, improving the reliability of semiconductor devices by reducing thickness differences and surface roughness, thus addressing the challenges of scaling down in semiconductor manufacturing.

Implementation Method 1

A process involving physical vapor deposition and ion bombardment is used to form electrode layers

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 2

ion bombardment modifies the layer profiles to improve thickness uniformity and stability, specifically by making the sidewall portions thicker than the top and bottom portions

Methodology Applied

Scientific EffectIon bombardment sputtering: Sputtering

Data Source

PatentUS20240413193A1Semiconductor device structure with electrode layer and method for forming the same

Publication Date: 2024.12.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method for forming a semiconductor device structure is provided. The method includes forming a first electrode layer over a substrate. The method includes forming a capacitor dielectric layer over the first electrode layer and the substrate. The method includes depositing a second electrode layer over the capacitor dielectric layer. The method includes bombarding the second electrode layer with ions of an inert gas to sputter first atoms from the second electrode layer. The treated second electrode layer has a treated first top portion, a treated first sidewall portion, and a treated first bottom portion. The treated first sidewall portion is over the sidewall of the first electrode layer and connected between the treated first top portion and the treated first bottom portion, and the treated first sidewall portion is thicker than the first sidewall portion.