Semiconductor Electrode Layering for Convex Defect Etching
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Solution Overview
Problem
Conventional semiconductor device manufacturing methods result in convex and concave defects due to foreign matter on the semiconductor substrate, leading to poor coverage and slits in the aluminum film, which cause defects during electrode patterning and plating, resulting in non-conforming devices.
Innovation Solution
A method involving forming a first electrode film, exposing convex defects with a resist film break, etching the convex defect, removing the resist film, and forming a second electrode film to cover the defects, thereby converting convex defects into concave defects and ensuring uniform thickness etching to prevent further defects during patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single electrode film is formed to cover foreign matter, then the foreign matter is enclosed, but convex defects occur on the surface leading to slits and poor coverage
Solution Approach 1:
The electrode film is divided into multiple layers (first electrode film, second electrode film, and optionally third electrode film). The first electrode film encloses foreign matter and creates convex defects, which are then etched to form concave defects. The second electrode film fills these concave defects and provides uniform coverage. This segmentation allows each layer to perform its specific function without compromising overall reliability or precision.
Solution Approach 2:
The first electrode film is formed preliminarily to enclose foreign matter before the second electrode film is deposited. Convex defects on the first electrode film surface are etched to create concave defects, which are then filled by the second electrode film. This preliminary action ensures that the second electrode film can uniformly cover the surface without being disrupted by protrusions from foreign matter.
2Reliability
If the electrode film thickness is increased to cover foreign matter, then foreign matter coverage is improved, but convex defects and slits occur during patterning
Solution Approach 1:
The convex defects that initially cause harm (leading to slits and patterning issues) are converted into beneficial concave defects through etching. These concave defects are then filled by the second electrode film, transforming the harmful protrusions into useful recesses that ensure uniform coverage and eliminate the root cause of slits and patterning defects.
Solution Approach 2:
The physical state of the electrode film surface is changed from convex (protruding) to concave (recessed) through etching. This parameter change in surface topology allows the second electrode film to uniformly cover the surface, preventing the formation of slits and improving patterning quality while maintaining adequate foreign matter coverage.
3Ease of manufacture
If conventional single-layer electrode formation is used, then the process is simple, but defects occur during subsequent patterning and plating
Solution Approach 1:
The electrode formation process is segmented into multiple deposition and etching steps, creating distinct functional layers. The first electrode film encloses foreign matter, the etching step creates concave defects, and the second electrode film fills these defects to provide a uniform surface for patterning and plating. This segmentation improves reliability without significantly complicating the manufacturing process.
Solution Approach 2:
The first electrode film and etching step are performed preliminarily to prepare the surface before the second electrode film is deposited. This preliminary action ensures that the second electrode film is deposited on a uniform surface, preventing patterning and plating defects while maintaining process efficiency through a systematic multi-step approach.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces convex and concave defects, enhancing the conforming rate of semiconductor devices by preventing slits and ensuring uniformity in the electrode film thickness without altering design conditions, thus maintaining device characteristics.
Implementation Method 1
inducing a break in the resist film at a portion corresponding to the convex defect, thereby generating a resist defect portion from which the convex defect is exposed
Implementation Method 2
etching the convex defect exposed from the resist defect portion
Implementation Method 3
forming a second electrode film at the surface of the first electrode film after the removal of the resist film
Data Source
AI summary
A method of manufacturing a semiconductor device, including: forming a first electrode film at a surface of a semiconductor wafer, the first electrode film having a convex defect at a surface thereof; covering the surface of the first electrode film with a resist film and inducing a break in the resist film at a portion corresponding to the convex defect, thereby generating a resist defect portion from which the convex defect is exposed; etching the convex defect exposed from the resist defect portion; removing the resist film after the etching; forming a second electrode film at the surface of the first electrode film after the removal of the resist film, thereby forming a surface electrode constituted by the first electrode film and the second electrode film; and patterning the surface electrode.