Common Electrode Nanostructures for Defect-Controlled Micro-LED Growth
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Solution Overview
Problem
Existing display devices face defects during the growth of light-emitting elements in the long wavelength range, which affect their performance and reliability.
Innovation Solution
The display device incorporates nanostructures in the common electrode layer, with specific arrangements of light-emitting elements and semiconductor layers, including doped n-type gallium nitride and inorganic insulating materials like silicon oxide or silicon nitride, to prevent defects during the growth of light-emitting elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If light-emitting elements in long wavelength range are grown, then the display device can achieve broader color coverage and higher performance, but defects occur during the growth process affecting reliability
Solution Approach 1:
Nanostructures are introduced as intermediary elements within the common electrode layer to mediate the growth process of light-emitting elements. These nanostructures act as nucleation sites or growth templates that guide the epitaxial growth, preventing defects while enabling long wavelength element formation. The intermediary nanostructures facilitate controlled material deposition and crystal growth, resolving the contradiction between achieving high-performance long wavelength elements and preventing growth defects.
Solution Approach 2:
The common electrode layer is differentiated into regions with and without nanostructures, creating local quality variations. Areas with nanostructures provide enhanced growth control and defect prevention, while other regions maintain standard characteristics. This localized modification allows the display device to achieve defect-free long wavelength element growth in critical areas without requiring uniform changes across the entire structure, thus improving reliability while maintaining manufacturing precision.
2Reliability
If nanostructures are added to the common electrode layer, then defect prevention is improved, but device complexity increases
Solution Approach 1:
The common electrode layer is segmented into multiple functional zones: regions containing nanostructures for defect prevention and regions without nanostructures for standard operation. This segmentation allows the complex functionality of defect prevention to be localized to specific areas, reducing the overall device complexity while maintaining the reliability benefits where needed. The segmented approach enables selective application of nanostructures only in regions requiring enhanced growth control.
3Manufacturing precision
If a multi-layer common electrode structure is used, then growth control is improved, but manufacturing complexity increases
Solution Approach 1:
The multi-layer common electrode structure combines several functions into a single integrated component: electrical conduction, mechanical support, and growth control through embedded nanostructures. By merging these functions into one unified layer rather than separate components, the structure achieves improved growth control while minimizing fabrication complexity. The nanostructures are integrated within the common electrode layer formation process, eliminating the need for separate deposition or assembly steps.
Data Source
AI summary
A display device includes pixel electrodes spaced apart from one another on a substrate; light-emitting elements disposed on the pixel electrodes; a common electrode layer disposed on the light-emitting elements; and an undoped semiconductor layer disposed on the common electrode layer. The display device includes nanostructures disposed in the common electrode layer and spaced apart from one another, and the common electrode layer includes a first common electrode layer disposed between the undoped semiconductor layer and the nanostructures, and a second common electrode layer disposed between adjacent nanostructures and disposed between the light-emitting elements and the nanostructures.