Semiconductor Electrode Deposition With Plasma Ligand Removal
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Solution Overview
Problem
The electrical characteristics of semiconductor devices are degraded due to impurities such as carbon, oxygen, and hydrogen ligands in electrode precursors, which increase resistance, and the formation of films with irregular surfaces during etching processes, leading to defects and damage to the silicon film or silicon-containing film.
Innovation Solution
A method involving the sequential injection of low-resistance metal precursors, exposure to hydrogen or oxygen plasma to remove impurities, and the formation of low-resistance metal thin film layers using plasma treatment to enhance conductivity and reduce damage during the electrode formation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a precursor containing ligands of carbon, oxygen, and hydrogen is used for forming electrodes, then the electrode can be formed, but the ligands act as impurities that increase the resistance of the electrode
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment before and after electrode formation to remove ligand impurities. The method includes injecting a precursor, performing first plasma treatment to remove adsorbed impurities, forming the electrode, performing second plasma treatment to remove remaining ligands, and then forming a deposition film. This preliminary and subsequent plasma cleaning resolves the contradiction by eliminating resistance-increasing impurities while maintaining the electrode formation process.
Solution Approach 2:
The patent converts the harmful effect of ligand-containing precursors into a beneficial process by using plasma treatment to transform the ligands into removable volatile compounds. The plasma treatment converts carbon, oxygen, and hydrogen ligands into volatile species that can be evacuated, thereby converting the harmful impurity-containing precursor into a useful deposition source that leaves minimal residue.
2Reliability
If a titanium nitride film is formed as a barrier film to prevent damage to the silicon film, then the silicon film is protected from halogen element damage, but the titanium nitride film itself may be damaged by halogen elements in the deposition gas
Solution Approach 1:
The patent introduces ruthenium or ruthenium-containing film as an intermediary layer between the silicon film and the electrode. This intermediary layer has superior resistance to halogen element corrosion compared to titanium nitride, while still providing effective barrier protection to the silicon film. The ruthenium layer acts as a more durable mediator that prevents both silicon film damage and maintains its own integrity in the presence of halogen-containing deposition gases.
3Manufacturing precision
If the silicon film is etched by halogen elements during deposition, then the surface becomes irregular, but forming a barrier film adds process complexity
Solution Approach 1:
The patent employs composite material structures by stacking multiple thin film layers including silicon film, ruthenium barrier film, electrode layer, and deposition film. This composite structure provides enhanced protection against halogen etching while maintaining surface regularity. The multi-layer composite approach achieves superior manufacturing precision through the combined properties of each layer, particularly the ruthenium barrier layer that resists halogen corrosion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively lowers electrode resistance, reduces impurities, and minimizes surface irregularities, thereby improving the electrical characteristics and reliability of semiconductor devices.
Implementation Method 1
injecting a gas containing hydrogen (H) or oxygen (O) onto the substrate
Implementation Method 2
forming a low-resistance metal thin film layer by injecting a gas containing hydrogen (H) or oxygen (O) onto the substrate
Data Source
AI summary
An electrode forming method for a semiconductor device in accordance with exemplary embodiments includes preparing a substrate, injecting a precursor containing a low-resistance metal element onto the substrate, and forming a low-resistance metal thin film layer by injecting a gas containing hydrogen (H) or oxygen (O) onto the substrate. Therefore, in accordance with exemplary embodiments, it is possible to provide an electrode from which ligand impurities derived from a precursor containing a low-resistance metal element are removed. Therefore, it is possible to provide an electrode with low resistance.