Semiconductor Electrode Supporters with Curved Profiles
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Solution Overview
Problem
Semiconductor devices, such as DRAM, face challenges in achieving sufficient capacitance due to reduced design rules and the need for increased capacitance per cell, which is not effectively addressed by existing methods for dielectric layer thickness reduction and contact area enhancement between electrodes and dielectric layers.
Innovation Solution
The semiconductor device incorporates a triple-structured supporter system with varying profiles to increase the contact area between electrode structures and the dielectric layer, including a first supporter with a curved upper surface and a flat lower surface, a second supporter with a flat upper surface and a curved lower surface, and a third supporter with a thinner profile, all of which are made from materials like SiCN to reduce warpage and enhance etch selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the dielectric layer thickness is reduced to increase capacitance, then the capacitance per cell increases, but the mechanical strength and stability of the dielectric layer deteriorate
Solution Approach 1:
The dielectric layer is divided into multiple segments stacked vertically (first dielectric layer, second dielectric layer, third dielectric layer) rather than using a single thick layer. This segmentation allows the total dielectric thickness to be reduced while maintaining mechanical stability through the distributed structure, resolving the contradiction between achieving high capacitance and maintaining structural integrity.
Solution Approach 2:
The patent transitions from a single-layer dielectric structure to a multi-layer stacked structure in the vertical dimension. By stacking multiple thinner dielectric layers with electrode structures between them, the design achieves increased capacitance through additional interfaces while each individual layer maintains adequate mechanical strength, thus resolving the contradiction.
2Quantity of substance
If the contact area between electrode and dielectric layer is increased to improve capacitance, then the capacitance per cell increases, but the device complexity and manufacturing difficulty increase
Solution Approach 1:
The electrode structures are designed with different geometries at different locations - having curved surfaces at interfaces with dielectric layers to maximize contact area locally, while maintaining simpler overall device architecture. This local optimization of contact geometry increases capacitance without proportionally increasing overall device complexity.
Solution Approach 2:
The electrode structures incorporate curved surfaces rather than flat surfaces at the interfaces with dielectric layers. This curvature increases the contact area between electrodes and dielectric layers, thereby improving capacitance while the curved geometry can be achieved through standard fabrication processes without significantly increasing manufacturing complexity.
3Reliability
If multiple supporters with varying profiles are introduced to increase contact area and prevent electrode leaning, then the capacitance and structural stability improve, but the device complexity and manufacturing steps increase
Solution Approach 1:
The supporters are designed with asymmetric profiles - having curved surfaces on one side that contacts the electrode and flat surfaces on the other side for manufacturing stability. This asymmetric design allows the supporters to effectively prevent electrode leaning and increase contact area while maintaining compatibility with standard fabrication processes, thus improving reliability without excessive complexity.
Solution Approach 2:
The supporters serve multiple functions simultaneously: they provide mechanical support to prevent electrode leaning, increase the contact area between electrodes and dielectric layers for higher capacitance, and act as spacers to maintain proper layer spacing. This multi-functionality reduces the need for additional separate components, thereby improving reliability without proportionally increasing device complexity.
Data Source
AI summary
A semiconductor device includes a plurality of electrode structures formed on a substrate; and an upper supporter group and a lower supporter between upper ends and lower ends of the plurality of electrode structures The upper supporter group includes a plurality of supporters, and at least some of the plurality of supporters each have an upper surface and a lower surface. One of the upper surface and the lower surface has a curved profile, and the other surface has a flat profile.