Electrode Unit Spatial Separation for Thin Film Uniformity
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in achieving uniformity of thin film material deposition due to the integration of plasma and source gas distribution spaces, which complicates the control of thin film quality.
Innovation Solution
The apparatus spatially separates plasma forming spaces from source gas distributing spaces, with additional purge gas distribution spaces to improve uniformity and control of thin film deposition, enhancing step coverage and efficiency by preventing unwanted deposition around plasma forming areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If plasma forming space and source gas distributing space are integrated into a single space, then device complexity is reduced, but manufacturing precision of thin film deposition deteriorates due to poor uniformity
Solution Approach 1:
The electrode unit is divided into distinct functional regions: a plasma forming space for generating plasma and a source gas distributing space for uniform gas distribution. This segmentation allows each region to be optimized independently, with the plasma forming space containing plasma generation components and the source gas distributing space containing gas distribution holes, thereby achieving both structural clarity and deposition uniformity.
Solution Approach 2:
The source gas distribution function is extracted from the plasma forming space and placed in a separate source gas distributing space. This extraction eliminates the interference between plasma generation and gas distribution processes, allowing source gas to be uniformly distributed across the substrate surface without being affected by plasma activity, thus improving thin film uniformity.
2Manufacturing precision
If plasma forming space and source gas distributing space are separated, then manufacturing precision of thin film deposition is improved, but device complexity increases
Solution Approach 1:
The plasma forming space and source gas distributing space are merged into a single integrated electrode unit structure. The electrode unit contains both the plasma generating electrodes and the source gas distribution holes within its body, combining two separate functions into one component. This merging reduces the number of separate parts and simplifies the overall device structure while maintaining the functional separation needed for uniform deposition.
3Ease of manufacture
If source gas is distributed in the same space as plasma formation, then gas distribution is simplified, but thin film quality control deteriorates due to unwanted deposition around plasma areas
Solution Approach 1:
The source gas distribution function is extracted from the plasma forming space and placed in a dedicated source gas distributing space with uniformly distributed gas distribution holes. This extraction ensures that source gas is delivered directly to the substrate surface in a controlled manner, preventing unwanted deposition around plasma forming areas and enabling precise thin film quality control.
Solution Approach 2:
The source gas distributing space is designed with gas distribution holes arranged in a specific pattern to achieve uniform local gas distribution across the substrate surface. This local optimization of gas delivery ensures that each region of the substrate receives appropriate source gas flow, preventing localized unwanted deposition and achieving consistent thin film quality across the entire substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This separation improves the uniformity and quality of thin film deposition, increases the efficiency of source gas use, and minimizes unwanted thin film material deposition, thereby enhancing the overall control and quality of the thin film process.
Implementation Method 1
an electromagnetic field is formed in the reaction space by the RF power supplied to the plasma electrode 20, whereby plasma is formed on the substrate (W) by the electromagnetic field
Implementation Method 2
an electromagnetic field is formed in the reaction space by the RF power supplied to the plasma electrode 20
Implementation Method 3
a thin film deposition process of depositing a thin film of a predetermined material on a substrate
Data Source
AI summary
Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and an electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.