Electroless Plating for Semiconductor Terminal Coupling
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Solution Overview
Problem
Existing methods for manufacturing semiconductor substrates with semiconductor elements, such as TFTs, often result in substrate deformation and damage to peripheral circuit elements due to high-temperature processing, leading to reduced product life and conductivity issues during the transfer and joining process.
Innovation Solution
A method involving the formation of wiring and element substrates with terminals facing upwards, allowing for electroless plating to couple the terminals without applying excessive heat and pressure, ensuring reliable conductivity and easy inspection, while using an adhesive within the terminal group to enhance joining strength and prevent adhesive coating on wiring-side terminals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature processing is used to manufacture semiconductor substrates with semiconductor elements, then semiconductor elements such as TFT can be formed on the substrate, but the substrate deforms and peripheral circuit elements are damaged
Solution Approach 1:
The manufacturing process is divided into two separate stages: first forming semiconductor elements on a heat-resisting base substrate using high-temperature processing, then separating the element-forming film from the base substrate and joining it to the wiring substrate. This segmentation allows high-temperature processing to be isolated from heat-sensitive components, resolving the contradiction between forming reliable semiconductor elements and preventing substrate/circuit damage.
Solution Approach 2:
A heat-resisting base substrate is introduced as an intermediary that can withstand high-temperature processing. The semiconductor elements are first formed on this intermediary substrate, then transferred to the final wiring substrate. This intermediary allows the use of high-temperature processing without exposing the final substrate and circuit elements to damaging temperatures.
2Reliability
If heat and pressure are applied to avoid open defects in joining wiring substrate and TFT, then conductivity between terminals is improved, but the TFT is damaged
Solution Approach 1:
Conductive particles are pre-applied to the bump structure before the joining process. This preliminary action ensures that conductivity pathways are already established, allowing the joining to proceed without requiring excessive heat and pressure that would damage the TFT. The conductive particles are positioned in advance to bridge the terminals effectively.
Solution Approach 2:
The joining process replaces excessive mechanical pressure and heat with a more gentle bonding method using pre-positioned conductive particles. Instead of relying on high pressure to create conductivity, the conductive particles are strategically placed to establish electrical pathways, substituting the mechanical/thermal joining approach with a particle-based conductivity solution that protects the TFT.
3Reliability
If conductive particles are printed and arranged on bump to join wiring substrate and TFT, then conductivity is achieved, but open defects occur due to inaccurate bump heights, printing errors, and substrate bending
Solution Approach 1:
The bump structure with pre-applied conductive particles serves a dual function: it provides both the mechanical connection point and the electrical conductivity pathway. The bump's three-dimensional structure naturally positions the conductive particles for optimal contact, allowing the system to self-align and self-correct positioning variations without requiring high external precision, thereby reducing open defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances conductivity and reliability by reducing defects, allowing for easy inspection and maintenance of the coupling area, and increases the joining strength of the semiconductor substrate, resulting in a highly reliable electro-optical device with desirable element characteristics.
Implementation Method 1
electrically coupling the element-side terminal that has been exposed by separating the second substrate to the wiring-side terminal disposed outside the semiconductor element by electroless plating
Data Source
AI summary
A method is provided including, after joining a wiring substrate and an element substrate, separating a second substrate of the element substrate from a semiconductor element, and electrically coupling an element-side terminal that has been exposed by the separation to a wiring-side terminal disposed outside the semiconductor element by electroless plating.