Electroless Plating Conductive Pad for TSV Manufacturing
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Solution Overview
Problem
The Through-Silicon-Vias (TSV) process for connecting semiconductor dies is complex and requires innovative techniques to simplify the manufacturing of miniaturized and modular semiconductor devices, such as System In Package (SIP), which demands efficient methods for forming through holes and creating conductive connections without the need for high-temperature sputtering or seed metal.
Innovation Solution
The semiconductor device incorporates a through electrode with a conductive pad formed by an electroless plating method, eliminating the need for seed metal and high-temperature sputtering processes, and uses a dielectric layer with a conductive bump to facilitate stacking and prevent cracking, with various manufacturing methods involving laser drilling, wet etching, and dry etching to form through holes and conductive pads.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the TSV process is used to connect semiconductor dies, then through holes can be formed for electrical connection, but the manufacturing process becomes complex and requires high-temperature sputtering and seed metal
Solution Approach 1:
The patent extracts and eliminates the complex high-temperature sputtering and seed metal formation steps from the TSV manufacturing process. Instead of using conventional multi-step processes, the invention forms conductive plugs directly through electroless plating and electrophoretic deposition, removing unnecessary process steps while maintaining electrical connection reliability
Solution Approach 2:
The patent replaces the mechanical/thermal sputtering process with electrochemical deposition methods (electroless plating and electrophoretic deposition). This substitution eliminates the need for high-temperature equipment and complex seed metal layers, simplifying the manufacturing system while achieving the same electrical connection function
2Reliability
If conventional TSV process with sputtering is used, then conductive plugs can be formed, but high-temperature processes are required which increase manufacturing complexity
Solution Approach 1:
The patent fundamentally changes the temperature parameter of the deposition process. Instead of using high-temperature sputtering (typically above 100°C), the invention employs electroless plating and electrophoretic deposition that operate at room temperature or near-room temperature, thereby eliminating the need for high-temperature processing equipment and simplifying the manufacturing process
3Volume of moving object
If semiconductor devices are miniaturized and modularized to meet consumer demands, then device size is reduced, but manufacturing process complexity increases
Solution Approach 1:
The patent segments the conductive plug formation process into distinct electrochemical stages (electroless plating followed by electrophoretic deposition), allowing each stage to be optimized independently. This segmentation enables precise control of plug dimensions and composition, facilitating miniaturization while maintaining manufacturing simplicity through standardized process modules
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces the complexity of TSV formation, and enables stable connections without the need for high-temperature processes, enhancing the efficiency and reliability of semiconductor device stacking and mounting.
Implementation Method 1
The conductive pad is formed by an electroless plating method, eliminating the need for seed metal and high-temperature sputtering processes
Implementation Method 2
laser drilling, wet etching, dry etching and the like are known as a technique for forming through holes for the TSV process
Implementation Method 3
laser drilling, wet etching, dry etching and the like are known as a technique for forming through holes for the TSV process
Implementation Method 4
laser drilling, wet etching, dry etching and the like are known as a technique for forming through holes for the TSV process
Data Source
AI summary
A method of manufacturing an electronic device. For example and without limitation, various aspects of the present disclosure provide a method of manufacturing an electronic device that comprises a die comprising a circuit side and a second die side opposite the circuit side, a through hole in the die that extends between the second side of the die and the circuit side of the die, an insulating layer coupled to the inner wall of the through hole, a through electrode inside of the insulating layer, a dielectric layer coupled to the second side of the die, and a conductive pad coupled to the through electrode. The through electrode and the insulating layer may, for example, extend substantially the same distance from the second side of the die.