Electroluminescent Device Boss Structure Connection Electrode
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Solution Overview
Problem
The existing manufacturing process for organic light-emitting diode (OLED) devices faces challenges with the thick connection electrode, which prolongs the film formation time and increases etching difficulty, affecting the reliability of electrical connections and product yield.
Innovation Solution
The electroluminescent device features a substrate with a protection layer that forms a boss structure, allowing a thinner connection electrode (0.3-1 μm) to be formed, connected through a via hole, reducing etching complexity and improving assembly reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the connection electrode is made thicker (2-3 μm) to improve electrical connection reliability, then the reliability of electric connection is improved, but the film formation time is prolonged and etching difficulty increases
Solution Approach 1:
The protection layer is designed to protrude upward to form a boss structure, transitioning from a flat two-dimensional layer to a three-dimensional elevated structure. This vertical dimensionality change allows the connection electrode to be thinner while still achieving reliable electrical connection, as the boss provides mechanical support and extended contact area.
Solution Approach 2:
The boss structure formed by the protruding protection layer acts as an intermediary between the substrate and the connection electrode. It provides mechanical support and facilitates reliable electrical connection without requiring the connection electrode to be thick, thus resolving the contradiction between connection reliability and film formation time.
2Reliability
If the connection electrode is made thicker to improve electrical connection reliability, then the reliability of electric connection is improved, but the etching difficulty occurs
Solution Approach 1:
By introducing the vertical dimension through the protruding boss structure, the connection electrode can be made thinner while maintaining connection reliability. This reduces the etching depth required and simplifies the etching process, resolving the contradiction between connection reliability and ease of manufacture.
Solution Approach 2:
The boss structure serves as an intermediary that provides mechanical support for the connection electrode, allowing the electrode to be thinner and easier to etch while still ensuring reliable electrical connection. This mediator approach resolves the contradiction between connection reliability and etching ease.
3Productivity
If the connection electrode is made thinner to reduce film formation time, then the productivity is improved, but the electrical connection reliability may be compromised
Solution Approach 1:
The protruding boss structure adds a vertical dimension that compensates for the reduced thickness of the connection electrode. This three-dimensional structure provides adequate mechanical support and electrical connection area even with a thinner electrode, resolving the contradiction between productivity and connection reliability.
4Ease of manufacture
If the connection electrode is made thinner to simplify etching, then the ease of manufacture is improved, but the electrical connection reliability may be compromised
Solution Approach 1:
The vertical protrusion of the boss structure compensates for the reduced thickness of the connection electrode, providing sufficient mechanical support and electrical connection area. This dimensional change allows for simpler etching while maintaining connection reliability.
Data Source
AI summary
An electroluminescent device and manufacturing method thereof are provided. The electroluminescence device comprises an array substrate (10). The array substrate (10) comprises a substrate (11); and a thin film transistor (12), a protection layer (13) and a connection electrode (14) provided in turn on the substrate (11). The protection layer (13) covers the thin film transistor (12); and the connection electrode (14) is provided on the protection layer (13). The protection layer (13) below the connection electrode (14) protrudes towards a side away from the substrate (11) to form a boss (131). The protection layer (13) comprises a via hole (132) provided at a position corresponding to a drain electrode (122) of the thin film transistor (12). The connection electrode (14) is connected with the drain electrode (122) of the thin film transistor (12) through the via hole (132). The electroluminescent device and manufacturing method thereof shorten the film formation time, reduce the etching difficulty and accordingly improves the production efficiency in the process of manufacturing the connection electrode while the reliability of electrical connection between a thin film transistor and a second electrode is improved.