Electrolyte Transistor for Low Leakage Memory
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Solution Overview
Problem
Conventional volatile memory cells experience sub-threshold leakage current, leading to charge loss and the need for frequent refresh, and require significant material and processing costs due to complex wiring of memory storage elements to access devices.
Innovation Solution
A transistor design incorporating a dielectric material adjacent to a channel region, with an electrolyte directly between the dielectric material and an electrode, allowing cations to move in response to electrical potential, eliminating the need for a capacitor and reducing leakage by using a high-k dielectric material to isolate the channel region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistor design with capacitor is used, then memory storage function is achieved, but sub-threshold leakage current causes charge loss and requires frequent refresh
Solution Approach 1:
The patent removes the capacitor component from the memory cell, extracting the charge storage function into the transistor's channel region itself. The transistor operates as both the access device and the storage element, eliminating the source of leakage current associated with capacitor-based storage while maintaining memory functionality through charge trapping in the channel.
Solution Approach 2:
The patent combines the access device (transistor) and storage element (capacitor) into a single integrated transistor structure. The channel region serves dual purposes as both the conduction path and the charge storage medium, merging previously separate components to reduce overall cell complexity and eliminate inter-component wiring.
2Power
If gate electrode overlaps sufficiently with source and drain regions to enhance drive current, then on-state current flow is improved, but off-state leakage current increases
Solution Approach 1:
The patent applies different doping concentrations to different regions of the transistor. The channel region has a first doping concentration optimized for charge storage, while the source and drain regions have a second doping concentration optimized for carrier injection. This local differentiation allows the gate to effectively control both drive current and leakage current by creating distinct electrical characteristics in different zones.
Solution Approach 2:
The patent modifies the doping concentration parameter throughout the transistor structure, using a higher doping concentration in the channel region compared to conventional designs. This parameter change increases the density of charge carriers available for storage while the specific doping profile maintains low leakage by creating appropriate potential barriers at the source-channel and drain-channel interfaces.
3Adaptability or versatility
If complex wiring of memory storage elements to access devices is implemented, then complete memory cell functionality is achieved, but material and processing costs increase significantly
Solution Approach 1:
The patent merges the access device and storage element into a single transistor component, eliminating the need for separate wiring connections between capacitor and transistor. The gate electrode directly controls the channel region that serves as both access path and storage medium, removing inter-component interconnects and simplifying the overall cell architecture.
Solution Approach 2:
The transistor structure performs multiple functions simultaneously: the channel region acts as both the conduction path for read/write operations and the charge storage element for data retention. This multi-functionality eliminates the need for dedicated capacitor structures and their associated wiring, reducing device complexity while maintaining complete memory cell functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces charge leakage, enhances writing efficiency, and decreases the write voltage, improving the performance and reducing material costs by eliminating the need for complex wiring and frequent refresh operations.
Implementation Method 1
An electrolyte may be directly between the dielectric material and the electrode and may include cations configured to move from a first end to a second end of the electrolyte responsive to exposure to an electrical field
Data Source
AI summary
A transistor comprises a channel region between a source region and a drain region, a dielectric material adjacent to the channel region, an electrode adjacent to the dielectric material, and an electrolyte between the dielectric material and the electrode. Related semiconductor devices comprising at least one transistors, related electronic systems, and related methods are also disclosed.