Electrolyzed Sulfuric Acid Cleaning for Ion-Implanted Resist Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current cleaning methods for electronic devices, such as liquid crystal display panels and semiconductor wafers, face challenges in effectively removing organic materials and resist masks post-ion implantation due to their low cleaning performance.
Innovation Solution
A cleaning method involving the production of an oxidizing solution by electrolyzing sulfuric acid, which is then heated by mixing with hydrogen peroxide or pure water, is used to enhance cleaning efficiency by increasing the temperature and oxidizing capabilities, allowing for effective removal of organic contaminants and resist masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional SPM cleaning or polymer remover is used, then the cleaning process is simple, but the cleaning performance is insufficient for removing ion-implanted resist
Solution Approach 1:
The patent changes the chemical parameters of the cleaning solution by using electrolyzed sulfuric acid with high oxidizing power instead of conventional SPM or polymer removers. This parameter change enables effective removal of ion-implanted resist while maintaining process simplicity.
Solution Approach 2:
The patent employs strong oxidizing substances generated through electrolysis of sulfuric acid to enhance the cleaning capability. The high oxidizing power of the electrolyzed solution enables it to break down and remove even heavily ion-implanted resist materials that conventional cleaners cannot effectively remove.
2Speed
If high-dose ion implantation is used for high-speed operation, then device speed is improved, but resist mask becomes difficult to remove
Solution Approach 1:
The electrolyzed sulfuric acid solution generates strong oxidizing substances that can effectively break down the cross-linked structure of ion-implanted resist, enabling complete removal even after high-dose ion implantation required for high-speed device operation.
Solution Approach 2:
The cleaning process using electrolyzed sulfuric acid is applied immediately after ion implantation and resist formation, addressing the resist removal challenge at the optimal point in the manufacturing sequence before subsequent processing steps.
3Reliability
If conventional cleaning methods are used, then processing time is short, but cleaning effectiveness is low
Solution Approach 1:
By changing the chemical composition and oxidizing power parameters of the cleaning solution through electrolysis, the patent achieves rapid and effective resist removal, reducing peeling time while significantly improving cleaning effectiveness compared to conventional methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves high cleanability, with temperatures above 100°C ensuring efficient peeling of resist layers, even those ion-implanted with boron, significantly reducing peeling time and improving productivity.
Implementation Method 1
producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning a workpiece with the oxidizing solution which is heated by heat of mixing
Implementation Method 2
producing an oxidizing solution by electrolysis of sulfuric acid
Implementation Method 3
cleaning a workpiece with the oxidizing solution which is heated by heat of mixing
Data Source
AI summary
A cleaning method includes: producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning a workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece. A method for manufacturing an electronic device includes: producing a workpiece; producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning the workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece.