Electromagnetic Surface Activation for Low-Temperature Deposition
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Solution Overview
Problem
Current semiconductor processing systems face challenges in achieving uniform film growth and control over surface chemistry at low temperatures, particularly for advanced epitaxial processes and small device geometries, due to pattern-loading effects and limited thermal budgets.
Innovation Solution
The use of an electromagnetic energy source, such as a UV lamp array or LED assembly, to modify the substrate surface during deposition processes at temperatures below 500°C, enabling control over surface chemistry and reactions without high-temperature heating, thereby allowing for improved uniformity and selectivity in film growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If thermal heating is used to modify substrate surface and control surface chemistry, then surface modification and defect control are achieved, but thermal budget is exceeded and bulk substrate is affected
Solution Approach 1:
The patent replaces thermal heating (mechanical/thermal system) with electromagnetic radiation (optical system) to achieve surface modification. The electromagnetic energy source delivers energy selectively to the substrate surface, enabling surface chemistry control and defect management without the need for high-temperature thermal processing that would affect the bulk substrate.
Solution Approach 2:
The electromagnetic energy source provides localized energy delivery to specific regions of the substrate surface. This allows surface modification and chemistry control to be applied selectively where needed, rather than uniformly heating the entire substrate, thereby avoiding thermal budget constraints and bulk substrate effects.
2Temperature
If low temperature deposition is used to maintain thermal budget, then thermal damage is avoided, but surface chemistry control and defect control become impossible
Solution Approach 1:
The patent substitutes thermal energy with electromagnetic energy for driving surface chemistry reactions. By using electromagnetic radiation instead of thermal heating, the system can achieve the necessary activation energy for surface reactions and defect control while maintaining low substrate temperature, thus preserving thermal budget.
Solution Approach 2:
The patent changes the energy delivery parameter from thermal (bulk heating) to electromagnetic (surface-specific). This parameter change enables surface chemistry control and defect management at low temperatures by delivering energy in a form that interacts selectively with surface atoms and molecules rather than heating the bulk material.
3Productivity
If conventional heating systems are used for film deposition, then deposition can proceed, but pattern-loading effects cause non-uniform film thickness
Solution Approach 1:
The electromagnetic energy source can be configured to provide spatially selective energy delivery across the substrate surface. This local quality approach compensates for pattern-loading effects by delivering energy precisely where needed, ensuring uniform film thickness even in regions with varying pattern densities that would otherwise experience non-uniform thermal fields.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances deposition rates and throughput while maintaining low thermal budgets, achieving better thickness uniformity and device performance for 3-nm and 5-nm technology nodes, and allows for surface modification without affecting the bulk substrate material.
Implementation Method 1
delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate
Implementation Method 2
thermally heating the substrate to a temperature of less than about 500° C.
Data Source
AI summary
Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.