Electron Beam Detection Apparatus with Aiming Device for Semiconductor Positioning
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Solution Overview
Problem
Current electron beam detection systems for semiconductor devices face inefficiencies due to the need for multiple stage movements for precise positioning, leading to increased machining difficulties, reduced detection accuracy, and longer detection times, especially when dealing with large semiconductor wafers like 300 mm silicon wafers.
Innovation Solution
The integration of an aiming device with a reflecting device allows for concentric arrangement of visible regions between the aiming device and the electron beam detection device, eliminating the center distance between their fields of view, enabling a single-stage movement for both coarse and fine positioning, thus reducing the stage's stroke requirements and enhancing detection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If multiple stage movements are used for precise positioning, then positioning accuracy is improved, but detection time increases and productivity decreases
Solution Approach 1:
The positioning process is segmented into two independent stages: coarse positioning using the aiming device with large field of view, and fine positioning using the electron beam detection device with small field of view. This segmentation allows each stage to optimize for its specific function, enabling parallel preparation and eliminating sequential movement delays.
Solution Approach 2:
The aiming device performs preliminary coarse positioning before the electron beam detection device begins fine positioning. By preparing the sample position in advance using the aiming device's large field of view, the system eliminates waiting time and enables both devices to operate simultaneously, improving detection speed without sacrificing precision.
2Measurement precision
If multiple stage movements are implemented, then positioning precision is improved, but the stage stroke requirement increases and device complexity increases
Solution Approach 1:
The system adds the optical dimension by introducing the aiming device with a different optical path and field of view. This allows coarse positioning to occur in the optical domain while the mechanical stage performs fine positioning, reducing the mechanical stage's stroke requirements and simplifying its movement mechanism.
3Device complexity
If the aiming device and electron beam detection device share the same optical path, then device complexity is reduced, but optical path interference occurs and detection accuracy decreases
Solution Approach 1:
The optical path is segmented into two separate channels: one for the aiming device and another for the electron beam detection device. This segmentation eliminates optical path interference between the two devices while maintaining independent optimization of each detection channel, ensuring high detection accuracy without mechanical or optical conflicts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration simplifies the optical path, reduces the stage's stroke, maintains consistent movement, and improves overall detection efficiency by allowing simultaneous alignment and detection without interfering optical paths, thereby enhancing the precision and speed of the electron beam detection process.
Implementation Method 1
a reflecting device configured to image a region to be detected on the semiconductor device into the aiming device by reflection of the region to be detected on the semiconductor device implemented by the reflecting device towards the aiming device
Implementation Method 2
a high-power electron beam is used to impinge on a surface of an object to be detected, and secondary electrons, backscattered electrons and the like are then generated by the impingement of the electron beam on the surface, and are captured to generate an electric signal
Implementation Method 3
secondary electrons, backscattered electrons and the like are then generated by the impingement of the electron beam on the surface
Data Source
AI summary
An electron beam detection apparatus for a semiconductor device and an electron beam detection assembly are disclosed, the electron beam detection apparatus including a stage, which is configured to carry and hold the semiconductor device at a top surface of the stage, and is translatable in two directions orthogonal to each other, an aiming device, configured to determine a position of the semiconductor device in a coordinate system of the electron beam detection apparatus by capturing an image of the semiconductor device, the aiming device provided with a first field of view and a first optical axis, and an electron beam detection device, configured to detect an emergent electron beam exiting the semiconductor device by projecting an electron beam to the semiconductor device, the electron beam detection device provided with a second field of view and a second optical axis which is not consistent with the first optical axis.