Electron Beam Generator for Narrow Plasma Temperature Distribution

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Solution Overview

Problem

Plasma etching processes for semiconductor manufacturing often result in plasma with wide electron temperature distributions, leading to inefficient dissociation and potential damage to structures due to undesired reactions.

Innovation Solution

An electron beam generator is integrated into a plasma processing apparatus, featuring a side insulator with an electron beam chamber, first and second electrodes, and a guide with slits to transmit electron beams into the process chamber, allowing for the generation of a second plasma with a narrow electron temperature distribution by injecting electron beams into the first plasma.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional plasma generation methods are used, then plasma is generated over the substrate support, but the electron temperature distribution becomes wide leading to inefficient dissociation and potential structural damage

Engineering Contradiction:

Improvedissociation efficiencyVSAvoidstructural damage

Core Design Contradiction:

Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The plasma generation process is segmented into two distinct stages: first plasma generation using conventional methods, and second plasma generation using electron beam injection. This segmentation allows each stage to perform its specific function optimally - the first plasma provides initial dissociation while the second plasma with narrow electron temperature distribution performs precise processing with minimal damage.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The first plasma is generated in advance before electron beam injection. This preliminary plasma generation creates a plasma environment that prepares the substrate surface, and then the electron beam is injected to generate a second plasma with controlled electron temperature distribution for precise processing.

Inventive Principle:

Principle #10Preliminary action

2Manufacturing precision

If electron beam injection is added to generate second plasma, then dissociation efficiency improves and structural damage is minimized, but the device complexity increases

Engineering Contradiction:

Improveplasma processing precisionVSAvoidelectron beam generator structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The substrate support structure is designed to serve multiple functions: it acts as both the substrate holder and the electron beam injection point. The side insulator that surrounds the substrate support also serves as the electron beam chamber wall. This multi-functionality reduces the need for separate dedicated electron beam injection components, thereby reducing overall device complexity.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Solution Approach 2:

The electron beam generator components are merged with the existing plasma processing chamber structure. The electron beam chamber is formed using the side insulator of the substrate support, and the first and second electrodes are integrated into this structure. This merging approach allows electron beam injection functionality to be added without requiring entirely separate hardware systems.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables intensive dissociation in specific regions, controlling the radical species and ion-to-radical ratios, thereby enhancing the precision and effectiveness of plasma processing while minimizing structural damage.

Implementation Method 1

a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber

Methodology Applied

Scientific EffectElectron emission: Thermionic Emission

Implementation Method 2

injecting electron beams into the first plasma to generate a second plasma with a narrow electron temperature distribution by injecting electron beams into the first plasma

Methodology Applied

Scientific EffectElectron impact dissociation: Electron Impact Desorption

Data Source

PatentUS11195696B2Electron beam generator, plasma processing apparatus having the same and plasma processing method using the same

Publication Date: 2021.12.07 SAMSUNG ELECTRONICS CO LTD

AI summary

An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.