Electron Beam Lithography Dose Pattern Segmentation
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Solution Overview
Problem
Current electron beam lithography methods face challenges in easily obtaining dose patterns with varying dose amounts for semiconductor device fabrication, particularly in achieving precise width control of target patterns on substrates.
Innovation Solution
The method involves obtaining a target pattern with a specified width, determining if a pre-calculated sample dose pattern is stored in a database, and acquiring a dose pattern with both fixed and variable dose cells to expose the substrate, allowing for adjustable electron beam doses based on the target pattern's width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a fixed dose pattern is used for all target patterns, then the process is simple and fast, but the manufacturing precision of target pattern width deteriorates
Solution Approach 1:
The dose pattern is segmented into two distinct types: fixed dose cells for regions where standard dosing suffices, and variable dose cells for regions requiring width-specific dosing. This segmentation allows the system to maintain simplicity in most areas while achieving precision only where needed, resolving the contradiction between process speed and width precision.
Solution Approach 2:
Different dosing strategies are applied to different regions of the dose pattern based on local requirements. Fixed dose cells provide uniform dosing for standard regions, while variable dose cells provide customized dosing for regions requiring precise width control. This local differentiation enables both speed and precision to coexist in their respective domains.
2Manufacturing precision
If a variable dose pattern is calculated for each target pattern width, then the manufacturing precision of target pattern width is improved, but the device complexity and calculation time increase
Solution Approach 1:
The dose pattern system is divided into fixed dose cells that use simple predetermined values and variable dose cells that use width-based calculations. This segmentation reduces overall system complexity by limiting complex calculations to only the variable dose regions, while the majority of the pattern uses simple fixed dosing.
Solution Approach 2:
Fixed dose values are predetermined and stored in advance for quick retrieval, eliminating the need for real-time complex calculations in standard regions. This preliminary preparation simplifies the overall system by pre-computing what would otherwise require complex on-the-fly calculations.
3Manufacturing precision
If complex calculations are performed to obtain dose patterns, then the manufacturing precision of target pattern width is improved, but the productivity decreases
Solution Approach 1:
The dose pattern is segmented into fixed dose cells requiring no calculation and variable dose cells requiring simple width-based dosing calculations. This segmentation dramatically reduces overall computational requirements compared to performing complex calculations for the entire pattern, thereby maintaining precision where needed while improving overall fabrication efficiency.
Solution Approach 2:
Complex calculations are applied only partially to the extent necessary - specifically to variable dose cells where width precision is required - rather than to the entire dose pattern. This partial application of complex calculations achieves the necessary precision while minimizing the impact on productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and precise control of electron beam exposure, allowing for easy attainment of desired pattern widths on substrates without the need for complex calculations, thereby improving the productivity and accuracy of semiconductor device fabrication.
Implementation Method 1
providing the electron beam to expose the substrate according to the dose pattern
Data Source
AI summary
Disclosed is an electron beam lithography method. The method comprises obtaining a target pattern having a first width to be formed on a substrate, acquiring a dose pattern including a fixed dose cell which corresponds to a region of the dose pattern with a constant dose amount of electron beam to be provided onto the substrate and a variable dose cell which corresponds to a region of the dose pattern with a variable dose amount which is varied based on the first width of the target pattern, and providing the electron beam to expose the substrate according to the dose pattern.